Effects of Annealing Temperature on the Surface and Ferroelectric Domain of PLT Films
HUANG Huidong,WANG Zhihong,LUShengbo,WU Jiagang,ZHU Jiliang,XIAO Dingquan
DOI: https://doi.org/10.3321/j.issn:1005-023x.2006.11.032
2006-01-01
Abstract:(Pb, La) TiO_3 films on Pt/SiO_2/Si substrate are prepared by RF magnetron sputtering at room temperature, and are treated at 550℃, 570℃, 600℃, 630℃ for 1 hour. By using X-ray diffraction, atomic force microscopy and piezoresponse force microscopy,the films treated at different temperature are investigated. The effects of annealing temperature on the crystalline structure, morphology and local ferroelectric domain distribution are dicussed. While annealing the films at the temperature from 550℃ to 630℃, it is found that the root-mean square of surface roughness and the size of surface grain increase, ferroelectric domains in films are 90 degree, and the majority of out-of-plane polarization are negative domain.