Electrical characterization of N-type nanocrystalline silicon on p-type crystalline silicon (nc-Si:H/c-Si) heterojunctions

Xu Gangyi,Wang Tianmin

DOI: https://doi.org/10.1088/0268-1242/15/6/322

IF: 2.048

2000-01-01

Semiconductor Science and Technology

Abstract:N-type hydrogenated nanocrystalline silicon (nc-Si:H) on p-type crystalline silicon heterojunctions were fabricated and electrically characterized. The nc-Si:H layer was deposited by plasma enhanced chemical vapour deposition. The C-V results confirm an abrupt heterojunction. The energy band diagram of the heterojunction was given on the basis of the C-V measurements. For the first time the electron affinity of nc-Si:H was estimated as 3.93 eV. J-V characteristics show good temperature stability and good rectifying properties. The temperature dependence of the J-V characteristics indicates that the forward conduction is determined by the recombination current on the nc-Si:H side of the depletion region, with an activation energy E-ac = 0.68 eV. The reverse conduction is dominated by currents generated in the depletion region with an activation energy E-ar = 0.65 eV, which is consistent with the activation energy for the recombination current. Combining this with the energy band diagram we quantitatively explain the reason for the good temperature stability of the heterojunctions.