Abstract:N-type hydrogenated nanocrystalline silicon (nc-Si:H) films were deposited by the plasma-enhanced chemical vapour deposition (PECVD) technique on p+-type crystal silicon (c-Si) substrates; then a kind of heterojunction structure of (n)nc-Si:H/(p+)c-Si was obtained. Both negative resistance in forward current–voltage (I–V) measurements and current staircases in reverse I–V experimental curves were observed from this heterojunction of (n)nc-Si:H/(p+)c-Si at 77 K. It was verified by the electrical experiments that this structure is a semiconductor heterojunction tunnelling diode. The forward current was considered to be dominated by interband tunnelling, excess and thermionic emission component. Within the reverse bias ranging from around 0 to −13 V, the reverse leakage current can be attributed to minority carriers instead of majority carriers tunnelling across the depletion layer of the heterojunction. By increasing the reverse applied voltage from about −13 V to −37 V, the reverse current can be ascribed to the injection of electrons via sequent resonant tunnelling through the Si nanocrystals quantum dots into the substrate. By further increasing the reverse bias, the reverse current can be assigned to carrier avalanche multiplication within the amorphous buffer layer in the depletion region to enhance the electron resonant tunnelling in the nc-Si:H layer. The results indicate that the (n)nc-Si:H/(p+)c-Si structure is a promising candidate for digital circuit applications.

Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions

Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

Junction Properties of Nitrogen-Doped Zno Thin Films

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon

Effect of Si Nanoparticles on Electronic Transport Mechanisms in P-doped Silicon-Rich Silicon Nitride/c-Si Heterojunction Devices

Current Transport Studies of Zno/P-Si Heterostructures Grown by Plasma Immersion Ion Implantation and Deposition

Temperature-dependent Resistive Switching of Amorphous Carbon/silicon Heterojunctions

Tunnelling in Heterojunction of N-Type Hydrogenated Nanocrystalline Silicon Film with P+-Type Crystal Silicon

Abnormal Humidity-Dependent Electrical Properties of Amorphous Carbon/silicon Heterojunctions

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Rectifying I-V Characteristic of LiNbO3∕Nb-doped SrTiO3 Heterojunction

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Temperature Coefficients Of Grain Boundary Resistance Variations In A Zno/P-Si Heterojunction

Temperature Dependent Transport and Photoresponse Properties of A Mn-Doped Zno/P-Si Heterojunction

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n -ZnO/ p -Si heterojunction

Effect of the frequency and temperature on the complex impedance spectroscopy (C–V and G–V) of p-ZnGa2Se4/n-Si nanostructure heterojunction diode

Optoelectrical Properties of a Heterojunction with Amorphous InGaZnO Film on N-Silicon Substrate