Stomatitis medicamentosa due to barbiturates.

S. Kennett

DOI: https://doi.org/10.1016/0030-4220(68)90008-X

1968-03-01

Abstract:

What problem does this paper attempt to address?

C-V-f, G-V-f and Z″-Z' Characteristics of n-Type Si/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition

Rawiwan Chaleawpong,Nathaporn Promros,Peerasil Charoenyuenyao,Adison Nopparuchikun,Takanori Hanada,Shinya Ohmagari,Tsuyoshi Yoshitake

DOI: https://doi.org/10.1166/jnn.2019.17124

2019-10-01

Abstract:n-Type Si/p-type B-doped ultrananocrystalline diamond heterojunction photodiodes were built using pulsed laser deposition at a heated substrate temperature of 550 °C. Following the capacitance-voltage-frequency (C-V -f) and conductance-voltage-frequency (G-V -f) plots, the series resistance (Rs) values at zero bias voltage were 154.41 Ω at 2 MHz and 1.72 kΩ at 40 kHz. Rs should be ascribed to Rs occurring in the metallic contact and the bulk resistance in the active layer. At 40 kHz, the interface state density (nss) was 1.78 x 1013 eV-1 cm-2 and dropped exponentially to 1.39 x 1012 eV-1 cm-2 at 2 MHz. An assessed nss occurring at the heterojunction interface was the cause of deterioration in the photo-detection properties. At different V values, the appearance of the real (Z') and imaginary (Z'') characteristic curves revealed single semicircles whose centers lay below the Z' axis. The magnitude of the curve was diminished with the increment of V. The particularities of Z''-Z' plots can be identified as an equivalent circuit model. The appropriate model included Rs, which was combined with the parallel circuit of resistance and constant phase element.
Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition

Rawiwan Chaleawpong,Nathaporn Promros,Peerasil Charoenyuenyao,Phongsaphak Sittimart,Satoshi Takeichi,Yūki Katamune,Abdelrahman Zkria,Eslam Abubakr,Mohamed Egiza,Ali Mohamed Ali,Tsuyoshi Yoshitake

DOI: https://doi.org/10.1166/jnn.2020.17838

2020-08-01

Abstract:Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature in order to calculate the requisite junction parameters using the Cheung and Norde approaches. For the calculation based on the Cheung approach, the series resistance (Rs), ideality factor (n) and barrier height (Φb) were 4.58 kΩ, 2.82 and 0.75 eV, respectively. The values of Rs and Φb were in agreement with those calculated using the Norde approach. Their characteristics for alternative current impedance at different frequency values were measured and analyzed as a function of the voltage (V) values ranging from 0 V to 0.5 V. Appearance of the real (Z') and imaginary (Z″) characteristics for all V values presented single semicircles. The centers of the semicircular curves were below the Z' axis and the diameter of the semicircles decreased with increments of the V value. The proper equivalent electrical circuit model for the manufactured heterojunction behavior was comprised of Rs combined with the parallel circuit of resistance and constant phase element.
Seebeck Measurements of N-Doped Diamond Thin Film

R Horiuchi,K Okano,N Rupesinghe,M Chhowalla,Gaj Amaratunga

DOI: https://doi.org/10.1002/1521-396x(200210)193:3<457::aid-pssa457>3.0.co;2-5

2002-01-01

Abstract:It was reported that although nitrogen (N) forms either 1.7 or 4.0 eV deep level donor in diamond, these levels do not contribute to the electrical conduction at room temperature. It was also reported that hydrogen (H)-termination of diamond surfaces results in the p-type electrical conduction in CVD diamond, and that this conduction can be diminished by subsequent oxygen (0) treatment. In this paper, the conduction type of N-doped CVD diamond studied through thermoelectric measurements is presented. The measurements of the Seebeck coefficient indicate that: (i) as-grown N-doped CVD diamond shows p-type conduction, (ii) once it is oxidized, it presents n-type electrical conduction with carrier concentrations of about 10(18) cm(-1). The results suggest the presence of competing bipolar transport between the surface and the bulk in CVD diamond.
Temperature dependency of impedance, dielectric, and conductivity properties for Si- p /beta-FeSi 2 - n heterostructures created through facing target sputtering

Nattakorn Borwornpornmetee,Phongsaphak Sittimart,Thawichai Traiprom,Boonchoat Paosawatyanyong,Tsuyoshi Yoshitake,Nathaporn Promros

DOI: https://doi.org/10.1016/j.mssp.2024.108499

IF: 4.1

2024-05-12

Materials Science in Semiconductor Processing

Abstract:To connect thermal dependency with Si- p /beta-FeSi 2 - n heterostructure efficiency, this work explored the impedance characteristics accompanied by dielectric and conductivity properties under different temperatures of 160–400 K. The Nyquist impedance plots for the heterostructures showed a semicircular arc that shrank as the temperature increased. These can be equivalently interpreted as a loop of single resistance paralleled to single constant phase element representing the heterostucture which also paralleled to inductive elements representing the inductive effect, serially connected to electrode resistance. The dielectric properties implied a shift in behavior for the relaxation process since donor-acceptor deionization occurred when the temperatures reached 320 K or higher due to shorter relaxation time and higher thermal dissipation. The conductivity properties indicate that the transport mechanism at 180 K or lower involves a prolonged transitional movement before transitioning into localized hopping at higher temperatures, corresponding to faster carrier movement. The relaxation and activation energy of the heterostructure reveal drastic transition of the energy from a low temperature of 160–240 K to a higher temperature of 320–400 K, where the electrical mechanism of the heterostructures become highly dependent on the temperature likely due to the high carrier density based on unevenly high activation energy.

materials science, multidisciplinary,engineering, electrical & electronic,physics, applied, condensed matter
Electrical Transport Behavior of N-Zno Nanorods/p-Diamond Heterojunction Device at Higher Temperatures

D. D. Sang,H. D. Li,S. H. Cheng,Q. L. Wang,Q. Yu,Y. Z. Yang

DOI: https://doi.org/10.1063/1.4745039

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:The n-ZnO nanorods (NRs)/p-diamond heterojunction structures are fabricated by thermal vapor growing ZnO NRs on chemical vapor deposited boron-doped diamond film. Temperature dependent current-voltage (I-V) characteristics of the p-n heterojunction are examined from 25 °C to 220 °C. The turn-on voltage and ideality factor of the devices decrease with increasing temperature, whereas the reverse saturation current increases at higher temperatures. The carrier injection efficiency is effectively enhanced at high temperatures. The electrical transport behaviors are investigated at various temperatures and bias voltages.
Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

Mustafa Coskun,Abdulmecit Turut,Kadir Ejderha

DOI: https://doi.org/10.1007/s10854-023-11251-7

2023-09-24

Journal of Materials Science Materials in Electronics

Abstract:Ni/ n -GaP/Al Schottky diodes have been fabricated and their dielectric characteristics have been measured in under vacuum ambient. Parameters such as dielectric constant ɛ′ , dielectric loss ɛ′′ , real Z′ and imaginary Z′′ impedance, real M′ and imaginary M′′ electrical modulus, and conductivity σ as a function of frequency f have been measured in the temperature range of 100–320 K with steps of 20 K. The Nyquist plots of ( Z′ – Z′′ ) have shown that non-Debye relaxation phenomena take place in the sample. The conductivity σ measurements at each temperature have shown that both ac and dc conductivities are present in the operating frequency range. The activation energy ( E a ) has been calculated using an Arrhenius equation from the peak frequency of both Z′′ – f and M′′ – f plots at each temperature. The obtained activation energies values have been obtained as 18 meV and 4.37 meV from the Z′′ – f plot and 16.33 meV and 4.37 meV from the M′′ – f plot for the high and low-temperature regions, respectively. The activation energies are originated from shallow interface states located near and relatively far from the bottom of the conduction band.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures

Dandan Sang,Jiaoli Liu,Xiaofeng Wang,Dong Zhang,Feng Ke,Haiquan Hu,Wenjun Wang,Bingyuan Zhang,Hongdong Li,Bo Liu,Qinglin Wang

DOI: https://doi.org/10.3389/fchem.2020.00531

IF: 5.5

2020-07-15

Frontiers in Chemistry

Abstract:In the present study, an n-ZnO nanorods (NRs)/p-degenerated diamond tunneling diode was investigated with regards to its temperature-dependent negative differential resistance (NDR) properties and carrier tunneling injection behaviors. The fabricated heterojunction demonstrated NDR phenomena at 20 and 80°C. However, these effects disappeared followed by the occurrence of rectification characteristics at 120°C. At higher temperatures, the forward current was increased, and the turn-on voltage and peak-to-valley current ratio (PVCR) were reduced. In addition, the underlying mechanisms of carrier tunneling conduction at different temperature and bias voltages were analyzed through schematic energy band diagrams and semiconductor theoretical models. High-temperature NDR properties of the n-ZnO NRs/p-degenerated diamond heterojunction can extend the applications of resistive switching and resonant tunneling diodes, especially in high-temperature, and high-power environments.

chemistry, multidisciplinary
Heterojunction Diodes Formed Using Thin-Film-C Containing Polycrystalline Diamond and Si

G AMARATUNGA,W MILNE,A PUTNIS

DOI: https://doi.org/10.1109/55.46922

IF: 4.8157

1990-01-01

IEEE Electron Device Letters

Abstract:Diodelike I-V characteristics measured in Al/C/Si structures formed by depositing thin C films onto Si substrates from a CH/sub 4//Ar plasma are discussed. The films, which contain polycrystalline diamond grains, are 500-1000 A thick. It is shown that the true I-V characteristics can be measured only after removing the fixed interface charge at the metal-C interface. By taking the C to be an intrinsic polycrystalline semiconductor, it is possible to treat the diode characteristics as arising from the presence of a C/Si heterojunction.<>
Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Liuhong Ma,Weihua Han,Hao Wang,Xiaoming Li,Fuhua Yang

DOI: https://doi.org/10.1063/1.4822318

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:The electronic behaviors in the n-type multiple-channel junctionless nanowire transistors are investigated in the thermal range from 10 K to 300 K. At low temperatures (T < 100 K), oscillation current spikes are clearly observed below flatband voltage and attributed to resonant tunneling through donor-induced quantum dot array. There is a minimum value at the critical temperature of 15 K for the drain currents and the electron mobility. The electron mobility increases rapidly above 15 K because of the thermal activation of ionized electrons. The temperature-dependent background trapping at the interface of silicon and silicon dioxide is evaluated by an Arrhenius-type off-state current with the activation energy of approximately 49 meV. As temperatures increasing, the negative shift of the threshold voltage with the slope of 4.0 mV K−1 is given predominantly by the thermal activation of traps.
Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Yunlong Wu,Liuwan Zhang,Guanlin Xie,Jia-Lin Zhu,Yonghai Chen

DOI: https://doi.org/10.1063/1.2831913

IF: 4

2008-01-01

Applied Physics Letters

Abstract:(110) ZnO/(001) Nb-1wt%-doped SrTiO3 n-n type heteroepitaxial junctions were fabricated using the pulse laser deposition method. A diodelike current behavior was observed. Different from conventional p-n junctions or Schottky diodes, the diffusion voltage was found to increase with temperature. At all temperatures, the forward current was perfectly fitted on the thermionic emission model. The band bending at the interface can qualitatively explain our results, and the extracted high ideality factor at low temperatures, as well as large saturation currents, is ascribed to the deep-level-assisted tunneling current through the junction.
Properties of N-Type Tetrahedral Amorphous Carbon (Ta-C)/p-type Crystalline Silicon Heterojunction Diodes

VS VEERASAMY,GAJ AMARATUNGA,JS PARK,HS MACKENZIE,WI MILNE

DOI: https://doi.org/10.1109/16.372057

1995-01-01

Abstract:Heterojunction diodes fabricated by filtered cathodic vacuum are (FCVA) deposition of n-type (nitrogen-doped) tetrahedral amorphous carbon (ta-C) on p-type crystalline silicon are analyzed in terms of their electronic and photoresponse properties. The thin ta-C films are deposited at room temperature allowing the ready formation of ideal step junctions. The abrupt nature of the heterojunctions are confirmed from SLMS measurements. Capacitance-voltage (C - V) characteristics also show that with an abrupt heterojunction between ta-C and Si, an interface state density of the order of 10(11) cm(-2) is obtained. Dark forward current density-voltage-temperature (J - V - T) characteristics are consistent with a current transport mechanism predominantly controlled by a tunnelling-recombination process through states at the ta-C/Si interface. The photospectral response and photovoltaic behavior of the junction are also presented as a function of doping in the ta-C. The response time of these unoptimized diodes is found to be in the range of 0.1-1.5 mu s.
Amorphous Diamond-Si Semiconductor Heterojunctions

GAJ AMARATUNGA,DE SEGAL,DR MCKENZIE

DOI: https://doi.org/10.1063/1.105525

IF: 4

1991-01-01

Applied Physics Letters

Abstract:Tetrahedrally co-ordinated amorphous carbon (amorphous diamond) deposited from the plasma stream of a vacuum arc on a graphite cathode is demonstrated as having semiconductor properties. The material is shown to form a heterojunction with both p- and n-type Si. A band gap of 2.9 eV is proposed for the a-diamond, based on the observed I-V characteristics of the heterojunction diodes. The material has a measured electrical breakdown strength of 10(9) V/m, which is comparable to that of high quality insulators such as SiO2 and Si3N4. Gas phase doping using B2H6, PH3, and N2 has been attempted.
Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions

Gao Xi-Li,Zhang Xiao-Zhong,Wan Cai-Hua,Wang Ji-Min

DOI: https://doi.org/10.1088/0256-307x/29/2/027102

2012-01-01

Chinese Physics Letters

Abstract:Nitrogen doped a-C/Silicon (a-C:N/Si) heterojunctions have been fabricated by using the pulsed laser deposition (PLD) technique and their current-voltage characteristics at various temperatures are investigated. For reverse applied voltages, a-C:N/Si heterojunctions exhibit metal-insulator transition characteristics and the transition temperature can be controlled by the applied voltages. After the excitation of repeated high reverse applied voltages, the current-voltage curves show obvious hysteresis behaviors at low temperatures. These hysteresis behaviors are reproducible and the ratio of the high/low resistance can be greater than 10(4).
Room temperature electroluminescence from a nanocrystalline diamond/Si heterojunction

Xingbo Liang,Lei Wang,Xiangyang Ma,Peiliang Chen,Deren Yang

DOI: https://doi.org/10.1016/j.diamond.2006.06.023

IF: 3.806

2007-01-01

Diamond and Related Materials

Abstract:We report on the fabrication and characterization of the room temperature electroluminescence of heterojunction between nanocrystalline diamond film (NDF) and heavily doped n-type single crystalline silicon (n+-Si) substrate. The current–voltage characteristics (I–V) of the NDF/n+-Si heterojunction show clear rectification properties. Importantly, with sufficiently high forward bias applied on the NDF/n+-Si heterojunction, fairly strong visible electroluminescence (EL) was obtained at room temperature. The EL occurred as the consequence of the electrons tunneling from the n+-Si into the NDF. An energy-band model has been proposed to understand the mechanism of the I–V characteristics and the EL for the NDF/n+-Si heterojunction.
Electrical properties of Ga-doped ZnO nanowires/Si heterojunction diode

Yas Al-Hadeethi,Rashad I. Badran,Ahmad Umar,Saleh H. Al-Heniti,Bahaaudin M. Raffah,Saleha Al-Zhrani

DOI: https://doi.org/10.1166/mex.2020.1725

2020-06-01

Materials Express

Abstract:Herein, we report the high-temperature electrical characteristics of heterojunction diode fabricated based on n -Ga-doped ZnO nanowires/ p -Silicon substrate. Various electronic properties such as rectification ratio, the effective barrier height, the diode ideality factor, etc. of the fabricated heterojunction diode at high temperature were investigated. The electrical characteristics were examined in the high-temperature range of 293 K–433 K in both reverse and forward biased conditions, which exhibited good stability over the entire temperature range. The observed current–voltage ( I–V ) studies confirmed three different conduction mechanisms for the fabricated heterojunction diodes, i.e., either field emission or tunneling, recombination-tunneling mechanism and the transport mechanism dominated by space-charge-limited current at the different regions. The observed electrical results exhibited fluctuations in the sensitivity of the quality factor of the heterojunction diode and consequently corresponding fluctuations in the resistance. The linear dependence of effective barrier height on quality factor can be attributed to the presence of some lateral inhomogeneities in the barrier height. The analysis of C–V data was conducted to deduce the value of barrier height of Schottky barrier for the fabricated heterojunction diode. Interestingly, the observed results assert the mismatch that occurs between the interface states and resulting capacitance of the fabricated heterojunction diode.
Hopping Conduction in Partially Compensated Doped Silicon.

J ZHANG,W CUI,M JUDA,D MCCAMMON,RL KELLEY,SH MOSELEY,CK STAHLE,AE SZYMKOWIAK

DOI: https://doi.org/10.1103/physrevb.48.2312

1993-01-01

Abstract:We have measured the dc electrical resistance of partially compensated (5-50%)_ion-implanted Si:P,B (both n and p type), over the temperature range 0.05-30 K. The temperature behavior is consistent with the prediction of the model for variable-range hopping (VRH) with a Coulomb gap rho(T)=rho0exp(T0/T)1/2 over a temperature range 6.5 < T0/T < 24. We observe deviations from this behavior at our high- and low-temperature extremes. In the low-temperature region, the resistivities show a stronger temperature dependence than the Coulomb-gap model prediction. The high-temperature deviation appears consistent with a transition from Coulomb-gap VRH to Mott VRH.
Effect of the frequency and temperature on the complex impedance spectroscopy (C–V and G–V) of p-ZnGa2Se4/n-Si nanostructure heterojunction diode

I. S. Yahia,M. Fadel,G. B. Sakr,S. S. Shenouda,F. Yakuphanoglu

DOI: https://doi.org/10.1007/s10853-011-5951-4

IF: 4.5

2011-10-01

Journal of Materials Science

Abstract:X-ray diffraction pattern and AFM results confirm the nanostructure of p-ZnGa2Se4/n-Si. The unit cell lattice parameters, the crystallite size L, the dislocation density δ, and the main internal strain ε were calculated. The temperature and frequency-dependent electrical characteristics of the Al/p-ZnGa2Se4/n-Si/Al heterojunction diode (HJD) have been investigated to determine the interface states which are responsible for the non-ideal behavior of the characteristics of the diode. The capacitance–voltage (C–V), conductance–voltage (G–V), and series resistance–voltage (Rs–V) characteristics of the diode have been analyzed in the frequency range of 5 kHz–1 MHz and temperature range of 303–423 K. The interfaces states of the diode were determined using conductance–voltage technique. The interface state density profile for the diode was obtained as a function of temperature and frequency. The values of the built-in potential Vbi, the doping concentration Nd and the barrier height φb(C–V) of the diode were calculated at different temperatures and frequencies. Our experimental results revealed that both the series resistance and interface state density values must be taken into account in studying the impedance spectroscopy of HJD to stand up their performance for electronic applications characteristics.

materials science, multidisciplinary
Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium Between 0.05 and 1 K

J Zhang,W Cui,M Juda,D McCammon,RL Kelley,SH Moseley,CK Stahle,AE Szymkowiak

DOI: https://doi.org/10.1103/physrevb.57.4472

1998-01-01

Abstract:We have studied non-Ohmic effects In hopping conduction in moderately compensated ion-implanted Si:P, B (both n- and p-type) and neutron-transmutation-doped Ge:Ga,As over the temperature range 0.05-0.8 K and up to moderately strong electric fields. In the limit of small fields, where the current is proportional to applied voltage, the resistivities of these materials are approximated over a wide temperature range by the model of variable range hopping with a Coulomb gap: rho=rho(o) exp(T-o/T)(1/2). The samples included in this study have characteristic temperatures T-o in the range 1.4-60 K for silicon, and 22-60 K for germanium. We have compared our data to exponential and "hyperbolic-sine" field-effect models of the electrical nonlinearity: rho(E)=rho(0)e(-x) and rho(E)=rho(0)x/sinh(x), where x=eEl/kT, and to an empirical hot-electron model. The exponential field-effect model tends to be a good representation for the samples with high T-o at low T. The sinh model can match the data only at low fields. The hot-electron model fits our data well over a wide range of power in the low-T-o-high-T regime. We discuss the quantitative implications of these results for the application of these materials as thermometers for microcalorimeters optimized for high-resolution spectroscopy. [S0163-1829(98)05208-4].
The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n -ZnO/ p -Si heterojunction

Tao Chen,Shu-Yi Liu,Qi Xie,Christophe Detavernier,R. L. Van Meirhaeghe,Xin-Ping Qu

DOI: https://doi.org/10.1007/s00339-009-5386-9

2009-01-01

Applied Physics A

Abstract:The effects of deposition conditions on the physical and electrical performance of the n -ZnO/ p -Si heterojunction were systematically investigated. ZnO films were deposited on the Si and glass substrates using direct current (DC) magnetron sputtering with various ambients and substrate temperatures. The results showed that increasing the O 2 content and substrate temperature during the deposition process could improve the crystallinity and stoichiometry of the ZnO film, resulting in a lower carrier concentration and higher resistivity. The electrical properties of the n -ZnO/ p -Si heterojunctions were also affected by the deposition parameters. For the junctions fabricated in the pure Ar ambient, the sample deposited at room temperature (RT) showed Ohmic behavior, while the one deposited at 300 °C exhibited poor rectifying behavior. On the other hand, the junctions fabricated in the O 2 /Ar ambient possessed ideal rectifying behaviors. The different carrier transport mechanisms for the heterojunctions under forward and reverse bias were systematically studied using a high temperature current–voltage (I-V) measurement. The recombination-tunneling current showed temperature insensitive performance while the space-charge limited current (SCLC) changed with the measurement temperature.
High-temperature photoelectronic transport behavior of n-TiO 2 nanorod clusters/p-degenerated boron-doped diamond heterojunction

Shunhao Ge,Dandan Sang,Liangrui Zou,Changxing Li,Guangyu Wang,Jianchao Fan,Qinglin Wang

DOI: https://doi.org/10.1016/j.diamond.2024.110962

IF: 3.806

2024-02-29

Diamond and Related Materials

Abstract:N-TiO 2 nanorod clusters (Ncs)/p-degenerated boron-doped diamond (n-TiO 2 Ncs/p-DBDD) film heterojunction was prepared by hydrothermal method, and the photoelectric properties depending on temperature dependence were tested. Three distinct emission peaks of 402 nm, 429 nm and 454 nm were detected by the photoluminescence (PL) test under 355 nm ultraviolet light and excited in the blue-green region light. The heterojunction exhibited good rectification characteristics and thermal stability from room temperature to 180 °C. The forward current first decreases and then increases with increasing temperature. The 160 °C is considered to be the ideal high temperature for the best performance of the heterojunction, with the rectification ratio reaching 20.667. The carrier transport mechanisms and tunneling process of n-TiO 2 Ncs/p-DBDD heterojunction with temperature are analyzed in detail through the established band structure diagram. This study provides an effective way method for the potential development of high-temperature stable optoelectronic devices.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films

Stomatitis medicamentosa due to barbiturates.

C-V-f, G-V-f and Z″-Z' Characteristics of n-Type Si/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition

Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition

Seebeck Measurements of N-Doped Diamond Thin Film

Temperature dependency of impedance, dielectric, and conductivity properties for Si- p /beta-FeSi 2 - n heterostructures created through facing target sputtering

Electrical Transport Behavior of N-Zno Nanorods/p-Diamond Heterojunction Device at Higher Temperatures

Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures

Heterojunction Diodes Formed Using Thin-Film-C Containing Polycrystalline Diamond and Si

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Properties of N-Type Tetrahedral Amorphous Carbon (Ta-C)/p-type Crystalline Silicon Heterojunction Diodes

Amorphous Diamond-Si Semiconductor Heterojunctions

Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions

Room temperature electroluminescence from a nanocrystalline diamond/Si heterojunction

Electrical properties of Ga-doped ZnO nanowires/Si heterojunction diode

Hopping Conduction in Partially Compensated Doped Silicon.

Effect of the frequency and temperature on the complex impedance spectroscopy (C–V and G–V) of p-ZnGa2Se4/n-Si nanostructure heterojunction diode

Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium Between 0.05 and 1 K

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n -ZnO/ p -Si heterojunction

High-temperature photoelectronic transport behavior of n-TiO 2 nanorod clusters/p-degenerated boron-doped diamond heterojunction