Abstract:Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of Internet of Things (IoT). Materials priorly used to serve in batteries have demonstrated metal-insulator transitions upon an electrical biasing due to resulting compositional change. This property is desirable for future resistive switching devices. Amorphous lithium lanthanum titanate (a-LLTO) was originally developed as a solid-state electrolyte with relatively high lithium ionic conductivity and low electronic conductivity among oxide-type solid electrolytes. However, it has been suggested that electric conductivity of a-LLTO changes depending on oxygen content. In this work, the investigation of switching behavior of a-LLTO was conducted by employing a range of voltage sweep techniques, ultimately establishing a stable and optimal operating condition within the voltage window of -3.5 V to 3.5 V. This voltage range effectively balances the desirable trait of a substantial resistance change by three orders of magnitude with the imperative avoidance of LLTO decomposition. This switching behavior is also confirmed at nanodevice of Ni/LLTO/Ni through in-situ biasing inside focused-ion beam/scanning electron microscope (FIB-SEM). Experiment and computation with different LLTO composition shows that LLTO has two distinct conductivity states due to Ti reduction. The distribution of these two states is discussed using simplified binary model, implying the conductive filament growth during low resistance state. Consequently, our study deepens understanding of LLTO electronic properties and encourages the interdisciplinary application of battery materials for resistive switching devices.

Temperature-dependent Resistive Switching of Amorphous Carbon/silicon Heterojunctions

The role of graphitic filaments in resistive switching behaviour of amorphous silicon carbide thin films

Anomalous electrical transport properties of amorphous carbon films on Si substrates

Abnormal Humidity-Dependent Electrical Properties of Amorphous Carbon/silicon Heterojunctions

Resistive switching in the devices of Ag/amorphous Ag 30 Ge 17 Se 53 films/Pt

Electrical Switching of Al-Doped Amorphous SiO<sub>x</sub> Thin Films

Resistive switching in the devices of Ag/amorphous Ag<sub>30</sub>Ge<sub>17</sub>Se<sub>53</sub> films/Pt

Bipolar Resistive Switching With Self-Rectifying Effects In Al/Zno/Si Structure

Fabrication of Silicon Highly-Rich SiO<inf>x</inf>(x&#x003C;0.75) and Its Novel Resistive Switching Behaviors

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

Nanocrystalline Si Pathway Induced Unipolar Resistive Switching Behavior from Annealed Si-rich SiNx/SiNy Multilayers

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon.

Characterization of Interfacial Barrier Charging As a Resistive Switching Mechanism in Ag/Sb2Te3/Ag Heterojunctions.

The critical temperature regions in resistive switching

Threshold Switching and Conductance Quantization in Al/Hfo2/Si(P) Structures

Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions

Direct observation of resistive switching memories behavior from nc-Si embedded in SiO 2 at room temperature

Tunable Si Dangling Bond Pathway Induced Forming-Free Hydrogenated Silicon Carbide Resistive Switching Memory Device

full papers 2910 Resistive switching Resistive Switching in Nanogap Systems on SiO 2 Substrates

Thermal stable and low current complementary resistive switch with limited Cu source in amorphous carbon

Elucidating Dynamic Conductive State Changes in Amorphous Lithium Lanthanum Titanate for Resistive Switching Devices