Step Growth of Primary Silicon in Al-Si Alloy

Qudong Wang,Wenjiang Ding,Chunquan Zhai,Xiaoping Xu,Junze Jin
DOI: https://doi.org/10.3321/j.issn:1006-2467.1999.02.005
1999-01-01
Shanghai Jiaotong Daxue Xuebao/Journal of Shanghai Jiaotong University
Abstract:Decantation during centrifugal casting was used to study the growth shape of primary silicon in hypereutectic Al-Si alloy, and the results show that there are growth steps on primary silicon, the heights of the step are from tens to hundreds μm, the heights reduce from root to tip of primary silicon, and the growth mechanism by dislocation step is founded for primary silicon. According to the growth mechanism, primary silicon can become pyramidal or prismatic, octahedral or global one. Branching and growth trace of primary silicon are also come from the growth mechanism.
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