Abstract:Tris(8-hydroxyquinolinato)aluminum (Alq(3)) has been widely used in organic light-emitting diodes (OLEDs) both as electron transport and light-emitting materials. To gain a deeper understanding for its carrier transport properties, we carry out first-principle band-structure calculations using density-functional theory with generalized gradient approximation by the Becke exchange plus Lee-Yang-Parr correlation functional. The intermolecular interaction related to transport behavior has been analyzed from the IF-point wave function as well as from the bandwidths and band gaps. From the calculated bandwidths of the frontier bands as well as the effective masses of the electron and the hole, we conclude that the mobility of electron is about 2-3 times larger than that for the hole. Furthermore, when several bands near Fermi surface are taken into account, we find that the interband gaps within the unoccupied bands are generally smaller than those for the occupied bands, which indicate that the electron can hop from one band to another, much easier than the hole, through electron-phonon coupling for instance, thus, effectively representing an even larger mobility for the electron than for the hole. Therefore, from both the intra-band and inter-band processes point of view, the theory shows that that Alq3 is a good electron transport material.

Ion-Beam-Induced Surface Damages On Tris-(8-Hydroxyquinoline) Aluminum

Thickness Dependent Behavior of Photoluminescence of Tris(8-hydroxyquinoline) Aluminum Film

Visualization of thermally-activated degradation pathways of tris(8-hydroxyquinoline) aluminum thin films for electroluminescence application

Metal-Induced Photoluminescence Quenching Of Tri-(8-Hydroxyquinoline) Aluminum

Pulsed laser deposition of aluminum tris-8-hydroxyquinline thin films

Electronic structure and energy level alignment of Alq3/Al2O3/Al and Alq3/Al interfaces studied by ultraviolet photoemission spectroscopy

Annealing, Oxidation and Electronic Structure of Alq3 Film Doped with Rubidium

Study on the Interaction Between Ag and Tris(8-Hydroxyquinoline) Aluminum Using X-Ray Photoelectron Spectroscopy

First-principle band structure calculations of tris(8-hydroxyquinolinato)aluminum.

The Evolution of Alq3 Films Exposure to Air

Nanoscale Investigation of Moisture-Induced Degradation Mechanisms of Tris(8-Hydroxyquinoline) Aluminium-Based Organic Light-Emitting Diodes

Plasma etching of III-V semiconductors and mechanism of crystalline damage

Surface modification and structure evolution of aluminum under argon ion bombardment

Saturation of ion irradiation effects in Cr2AlC

Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners

Study of ion sputtering on AlxSn100-x alloy system

Study of Gamma-Ray Radiation Effects on the Passivation Properties of Atomic Layer Deposited Al2O3 on Silicon Using Deep-Level Transient Spectroscopy

Blue Electroluminescence from Tris-(8-Hydroxyquinoline) Aluminum Thin Film

Electric field effect on luminescence efficiency in 8-hydroxyquinoline aluminum (Alq3) thin films

Nanoscale Study on Origins of the Bright Clusters In/on Moisture-Exposed Tris(8-Hydroxyquinoline) Aluminum Thin Films

Au ion irradiation effects on microstructure and deuterium permeation resistance of Al/Al 2 O 3 coating