Abstract:One of the most significant challenges of luminescent materials is the thermal quenching (TQ) at high temperature. Understanding the correlation between crystal structure variation and photoluminescence (PL) quenching is significant to achieve anti‐thermal quenching (anti‐TQ) phosphors. Herein, we unveil a universal principle governing switchable TQ and anti‐TQ behaviors in zero‐dimensional (0D) organic‐inorganic hybrid manganese bromides. We observed an abnormal anti‐TQ phenomenon when phosphor is excited in the valley of PL excitation (PLE) spectrum (indirect excitation) while TQ phenomenon is observed when excited in the peak and shoulder positions of PLE. Our findings demonstrate that PL intensity is influenced by two variable parameters: the effective Mn‐ligand distance and the shortest Mn‐Mn distance. These excitation‐dependent TQ and anti‐TQ behaviors originate from the relative changes in these distances, which modulate the competition between radiative and nonradiative recombination rates, as evidenced at the molecular level by molecular dynamics simulation. X‐ray activated radioluminescence (RL) also exhibits anti‐TQ behavior, which is analogous to the indirect excitation of PL evolution when excited at PLE valley. These insights bridge the gap between PL and RL properties in 0D manganese halides and offer potential avenues for developing advanced anti‐TQ phosphors, efficient LEDs, and high‐performance scintillators.

Electric field effect on luminescence efficiency in 8-hydroxyquinoline aluminum (Alq3) thin films

Study of Organic Electrolumenescent Thin Film Cell

Thickness Dependent Behavior of Photoluminescence of Tris(8-hydroxyquinoline) Aluminum Film

Metal-Induced Photoluminescence Quenching Of Tri-(8-Hydroxyquinoline) Aluminum

Excitation‐Dependent Anti‐Thermal Quenching in Zero‐Dimensional Manganese Bromides for Photoluminescence and X‐ray Scintillation

Light Emission Tuning of Organic Electroluminescence Material of Aluminum Tris-(8-hydroxyquinoline)(Alq_3)

Blue Electroluminescence from Tris-(8-Hydroxyquinoline) Aluminum Thin Film

Internal Electric Field in Tris-(8-hydroxyquinoline)aluminium (alq) Based Light Emitting Diode

Effect of electric fields on photoluminescence of 4-(dicyanomethylene)-2-methyl- 6-(p-dimethylaminostyryl)-4H-pyran

Time-resolved study of the magnetic field effects on electroluminescence in tri-(8-hydroxyquinoline)- aluminum based organic light emitting devices

F4TCNQ-Induced Exciton Quenching Studied by Using In-Situ Photoluminescence Measurements

Enhancement of Alq3 Fluorescence by Nanotextured Silver Films Deposited on Porous Alumina Substrates

Efficient Electroluminescence from a Quinacridone sub-monolayer inserted in a narrow exciton formation zone confined by a blocking layer

Electric Field-Induced Hole Injection-Enhanced Photoluminescence in A N,N '-Bis(3-methylphenyl)-n,n '-Bis(phenyl)-benzidine-based Emitter

Enhanced photoluminescence characteristics in Mg doped Alq3: An insight into doping mechanism

First-principle band structure calculations of tris(8-hydroxyquinolinato)aluminum.

Electronic structure and energy level alignment of Alq3/Al2O3/Al and Alq3/Al interfaces studied by ultraviolet photoemission spectroscopy

Excitation Energy Transfer Between Tris-(8-hydroxyquinoline) Aluminum and a Red Dye

Blue and Yellow Emission from Derivates of Tris(8-Hydroxyquinoline)aluminium Light-Emitting Diodes

Emission Characteristics Of Organic Light-Emitting Diodes With A Heterostructure Of Dye Doped Poly(N-Vinyl Carbazole)/Tris(8-Hydroxyquinoline) Aluminum

Photoluminescence from 8-Hydroxy Quinoline Aluminum Embedded in Porous Anodic Alumina Membrane