Abstract:Aluminum nitride films have been prepared on Si (100) substrates through two methods: basic pulsed laser deposition from sintered aluminum nitride ceramics and plasma-aided reactive pulsed laser deposition from elemental aluminum metal. The latter was performed in a nitrogen plasma environment generated from electron cyclotron resonance microwave discharge. The films deposited by both methods have been characterized by various techniques to examine the morphology and to determine the composition and structure. The formation of aluminum nitride compound was confirmed in the deposited films. The films prepared by basic pulsed laser deposition are found to contain oxygen impurities, while those obtained through the plasma aided method have exhibited a stoichiometric AlN composition. The films have shown better crystalline quality when prepared at higher temperatures, however, when aided by the nitrogen plasma the films contain pure AlN compound with much better crystalline quality even prepared at low temperatures. Mechanisms relevant to the deposition processes are also discussed with particular emphasis on the contributions of the nitrogen plasma to the film formation. A comparison of the different characteristic features associated with the films prepared by the two methods shows that the plasma aided method has reasonable advantages in preparing compound films.

Pulsed laser deposition of aluminum tris-8-hydroxyquinline thin films

Thickness Dependent Behavior of Photoluminescence of Tris(8-hydroxyquinoline) Aluminum Film

Optical Properties of Al 2 O 3 Thin Film Fabricated by Atomic Layer Deposition

Metal-Induced Photoluminescence Quenching Of Tri-(8-Hydroxyquinoline) Aluminum

Preparation of AlCuFe Quasicrystalline Film by Pulsed Laser-Arc Deposition

One-Step Synthesis of High Pure Tris(8-hydroxyquinoline)aluminum for Optics and Photonics

Visualization of thermally-activated degradation pathways of tris(8-hydroxyquinoline) aluminum thin films for electroluminescence application

Blue Electroluminescence from Tris-(8-Hydroxyquinoline) Aluminum Thin Film

Electronic structure and energy level alignment of Alq3/Al2O3/Al and Alq3/Al interfaces studied by ultraviolet photoemission spectroscopy

Annealing, Oxidation and Electronic Structure of Alq3 Film Doped with Rubidium

Molecular Beam Epitaxy of Single-Crystalline Aluminum Film for Low Threshold Ultraviolet Plasmonic Nanolasers

Fifth-order nonlinear optical response of Alq3 thin films

Surface-bound Tris(8-Hydroxyquinoline) Aluminum Nanowires with High Electron Transportation and Strong Fluorescence Emission

Sonochemical Fabrication of 8-Hydroxyquinoline Aluminum (alq3) Nanoflowers with High Electrogenerated Chemiluminescence.

Enhancement of Alq3 Fluorescence by Nanotextured Silver Films Deposited on Porous Alumina Substrates

Thermal Stability and Aggregation Study of Fluorinated Alq_3 Derivatives

Preparation Of Alpha-Al2o3 Thin Films By Electron Cyclotron Resonance Plasma-Assisted Pulsed Laser Deposition And Heat Annealing

In Situ Photoluminescence Investigation Of Doped Alq

Preparation of Aln Films by Pulsed Laser Deposition Using Sintered Aluminum Nitride and Elemental Aluminum As Raw Materials

Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices

Highly Transparent and Conductive Zn0.85Mg0.15O:Al Thin Films Prepared by Pulsed Laser Deposition