Abstract:This work investigates electrical properties of contacts between undoped solid C 60 and n-or p-type Si. Current-voltage measurements show that the two contacts result in strong rectification with opposite conduction directions, indicating two different kinds of barriers for carrier transportation at the interface of the two contacts. Current-temperature measurements show that the current is an exponential function of reciprocal temperature, from which we estimate the effective barrier height to be 0.30 and 0.48 eV for C 60 /n-Si and C 60 /p-Si, respectively. Within energy-band models we interpret successfully the above experimental results. Based on the energy-band model and experimental data we derived the electron affinity of solid C 60 film to be 3.92 eV and its energy gap to be below 1.72 eV. Highfrequency capacitance-voltage measurements show that biastemperature treatments have considerable effect on the C-V characteristics of the heterojunction. Assuming the existence of mobile negative charges in the solid C 60 film we explain the effect successfully and estimate the density of the negative charges to be 3.1×10 12 cm -2 . By use of the C-V results we determine the dielectric constant of the solid C 60 film to be 3.7±0.1 in the temperature range of 300-370 K.

Electrical Characteristics for Solid C-60/Gan Heterojunctions

Electrical properties of the contact of solid C60 and n-GaN

Electrical properties of contact of solid C60 and n-type GaAs

ELECTRICAL CHARACTERIZATION OF SOLID C 60 /si HETEROJUNCTIONS——RECTIFYING PROPERTIES, ENERGY-BAND MODELS, AND BIAS-TEMPERATURE EFFECT

Rectification Properties And Interface States Of Heterojunctions Between Solid C-60 And N-Type Gaas

Heterojunctions of Solid C-60 and Crystalline Silicon - Rectifying Properties and Energy-Band Models

Rectifying Properties of Solid C-60/N-Gan, C-70/N-Gan and C-70/P-Gan Heterojunctions

Electrical Properties of Solid C70/GaAs Heterojunctions

Heterojunctions Of Solid C70 And Crystalline Silicon - Rectifying Properties And Barrier Heights

Electrical properties of the contact of solid C70 and p-type crystalline silicon

Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

Investigation of C60 fullerenes modified g-GaN monolayer based on DFT study

Electrical Characterization of Zno-Based Homojunctions

First Principles Study of Electronic Properties of Carbon/silicon Carbide Nanotube Heterojunction

Electrical Characteristics of CuS/ZnO PN Heterojunction

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Characteristics of Heterojunction Diode of C-60/Chloroindium Phthalocyanine

Electronic Transport Properties in Doped C-60 Molecular Devices

Doped C 60 Study from First Principles Simulation

Forward Current Conduction Mechanism of Mechanically Exfoliated Β-Ga2o3/gan Pn Heterojunction Diode