Abstract:The contact geometry and electronic transport properties of a silicon carbide (SiC) molecule coupled with Au (1 0 0) electrodes are investigated by performing density functional theory plus the non-equilibrium Green's function method. We perform simulations of the Au–SiC–Au junction breaking process by calculating the conductance in four different anchoring geometries and obtain the equilibrium conductance and the projected density of states of junctions in the optimal position. The hollow–hollow configuration is found to be the most stable contact geometry with the largest conductance. From the calculation of restoring force and the spatial electron density differences after the structural break, we conclude that the Si–C bond is more stable than Au–C and Au–Si bonds in the single-molecular molecular junction. Moreover, the behavior of the junction currents is revealed under small bias. All junctions exhibit a linear current–voltage relationship, indicating characteristic metallic behavior at low bias voltage. The asymmetry of the I–V curves reflects the asymmetry of the molecule and the contact geometry. The origin of the transport spectrum of the junctions is discussed with the molecular projected self-consistent Hamiltonian (MPSH) states. The calculated results prove that the coupling morphology of the SiC molecule connected with electrodes, the distance and the external bias voltage have a great effect on the conductance of nanoscale junctions.

ELECTRICAL CHARACTERIZATION OF SOLID C 60 /si HETEROJUNCTIONS——RECTIFYING PROPERTIES, ENERGY-BAND MODELS, AND BIAS-TEMPERATURE EFFECT

Heterojunctions of Solid C-60 and Crystalline Silicon - Rectifying Properties and Energy-Band Models

Heterojunctions Of Solid C70 And Crystalline Silicon - Rectifying Properties And Barrier Heights

Electrical properties of contact of solid C60 and n-type GaAs

Electrical Characteristics for Solid C-60/Gan Heterojunctions

Rectification Properties And Interface States Of Heterojunctions Between Solid C-60 And N-Type Gaas

Electrical properties of the contact of solid C70 and p-type crystalline silicon

Bias-temperature effect in a rectifying Nb/C60/p-Si structure: Evidence for mobile negative charges in the solid C60 film

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Electrical properties of the contact of solid C60 and n-GaN

Rectifying Properties of Solid C-60/N-Gan, C-70/N-Gan and C-70/P-Gan Heterojunctions

Electrical Properties of Solid C70/GaAs Heterojunctions

Tuning of the Contact Properties for High-Efficiency Si/PEDOT:PSS Heterojunction Solar Cells

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

Tuning of C-60 Energy Levels Using Orientation-Controlled Phthalocyanine Films

Electronic Transport Properties in Doped C-60 Molecular Devices

Property Investigation of A-Si/c-si Hetero-Junction Structure

Two-Dimensional Electron or Hole Gas at Zno/6h-Sic Interface

Study of the Conductance and Structure Characteristics of C60/Sb Bilayers