Abstract:The contact geometry and electronic transport properties of a silicon carbide (SiC) molecule coupled with Au (1 0 0) electrodes are investigated by performing density functional theory plus the non-equilibrium Green's function method. We perform simulations of the Au–SiC–Au junction breaking process by calculating the conductance in four different anchoring geometries and obtain the equilibrium conductance and the projected density of states of junctions in the optimal position. The hollow–hollow configuration is found to be the most stable contact geometry with the largest conductance. From the calculation of restoring force and the spatial electron density differences after the structural break, we conclude that the Si–C bond is more stable than Au–C and Au–Si bonds in the single-molecular molecular junction. Moreover, the behavior of the junction currents is revealed under small bias. All junctions exhibit a linear current–voltage relationship, indicating characteristic metallic behavior at low bias voltage. The asymmetry of the I–V curves reflects the asymmetry of the molecule and the contact geometry. The origin of the transport spectrum of the junctions is discussed with the molecular projected self-consistent Hamiltonian (MPSH) states. The calculated results prove that the coupling morphology of the SiC molecule connected with electrodes, the distance and the external bias voltage have a great effect on the conductance of nanoscale junctions.

Bias-temperature effect in a rectifying Nb/C60/p-Si structure: Evidence for mobile negative charges in the solid C60 film

ELECTRICAL CHARACTERIZATION OF SOLID C 60 /si HETEROJUNCTIONS——RECTIFYING PROPERTIES, ENERGY-BAND MODELS, AND BIAS-TEMPERATURE EFFECT

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Bias-dependent Rectifying Properties of N-N Manganite Heterojunctions La1−xCaxMnO3/SrTiO3:Nb (X=0.65–1)

Heterojunctions Of Solid C70 And Crystalline Silicon - Rectifying Properties And Barrier Heights

Heterojunctions of Solid C-60 and Crystalline Silicon - Rectifying Properties and Energy-Band Models

Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors

In Situ Conductivity Study of the Phase Transition in Sb-doped C60

Controlling electrical and thermoelectric properties of bilayer SiC by bias voltage

Rectification Properties And Interface States Of Heterojunctions Between Solid C-60 And N-Type Gaas

The Charge Storage of the Nc-Si Layer

Electronic Transport Properties in Doped C-60 Molecular Devices

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Doped C 60 Study from First Principles Simulation

Study of the Conductance and Structure Characteristics of C60/Sb Bilayers

Electrical properties of contact of solid C60 and n-type GaAs

C-V CHARACTERISTICS OF Bi_2Ti_2O_7 THIN FILMS ON N-Si(100)

Structural characterization and Coulomb blockade of a-SiN x / nanocrystalline Si /a-SiN x asymmetric double-barrier structures

Capacitance characteristics in PbSrSe thin films

Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures.

Temperature Coefficients Of Grain Boundary Resistance Variations In A Zno/P-Si Heterojunction