Abstract:The intercalation of graphene with suitable atomic species is one of the most frequently applied methods to decouple the graphene layer from the substrate in order to establish the classical electronic properties of graphene. In this context, we studied the bismuth (Bi) intercalation of the (6√3×6√3)R30° reconstructed so-called "zeroth layer graphene'' on SiC(0001). As reported earlier by Sohn et al. [J. Korean Phys. Soc. 78, 157 (2021)], two phases are formed depending on the amount of intercalated Bi, which in turn is controlled by the annealing temperature: The α phase, showing a 1×1 periodicity with respect to the substrate, and, at higher temperatures, the √3×√3 reconstructed β phase. We characterise both phases and the transformation from the α to the β phase by photoelectron spectroscopy, normal incidence x-ray standing waves, electron diffraction and electron microscopy. We clearly see an almost complete intercalation of the graphene layers in both phases, with strong (covalent) interaction between the topmost Si atoms of the substrate and the Bi intercalant, but only weak (van der Waals) interaction between Bi and the graphene layer. The n-doping of the graphene found for the α phase decreases continuously during the phase transformation, in agreement with a reduced density of the Bi intercalating layer. Missing core level shifts of the surface species as well as the normal incidence x-ray standing waves results indicate that all surface Si atoms remain saturated during the transition and no dangling bonds are formed. Low energy electron microscopy and diffraction reveal the coexistance of both phases after annealing to intermediate temperatures and allow a quantitative analysis of island sizes and numbers.

C-V CHARACTERISTICS OF Bi_2Ti_2O_7 THIN FILMS ON N-Si(100)

Preparation and Properties of Bi2ti2o7 Thin Films by Chemical Solution Deposition

Structural and electrical properties of <i>c</i>-axis epitaxial and polycrystalline Sr<sub>3</sub>Bi<sub>4</sub>Ti<sub>6</sub>O<sub>21</sub> thin films

Synthesis and Microstructure of C-Axis Oriented Bi 4 Ti 3 O 12 Thin Films Using Sol-Gel Process on Silicon

Structural and electrical properties of c-axis epitaxial and polycrystalline Sr 3 Bi 4 Ti 6 O 21 thin films

ANISOTROPIC PROPERTIES OF <font>Bi</font>-2201 THIN FILMS GROWN ON VICINAL SUBSTRATES

Electrical Properties of Sr 3 Bi 4 Ti 6 O 21 Thin Films

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Electrical Characterization And Physical Analysis Of Epitaxial Cosi2 Grown From The Si<100>/Ti/Co System

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Bi-intercalated epitaxial graphene on SiC(0001)

Electrical Behaviors of C-Axis Textured 0.975bi0.5na0.5tio3–0.025bicoo3 Thin Films Grown by Pulsed Laser Deposition

Growth optimization and crossover of transport mechanisms in Bi2Se3 thin films

PREPARATION OF CALCIUM DOPED STRONTIUM BISMUTH TITANATE FERROELECTRIC THIN FILMS BY SOL-GEL PROCESSING

Structural And Electrical Properties Of C-Axis Epitaxial Homologous Srm-3bi4timo3m+3 (M = 3, 4, 5, And 6) Thin Films

Growth and structural characterisation of Sr-doped Bi2Se3 thin films

Growth and Structural Characterisation of Sr-doped Bi 2 Se 3 Thin Films

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Formation and Characterization of Spe Grown Ultra-Thin Cobalt Disilicide Film