Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

In Situ Conductivity Study of the Phase Transition in Sb-doped C60

Study of the Conductance and Structure Characteristics of C60/Sb Bilayers

Synchrotron Radiation Angle-Resolved Photoemission Study of the Orientational Phase Transition for K3C60

The Phase-Transition and Transport-Properties of Sr0.56c60o1.5

MECHANISM FOR THE ORIENTATIONAL PHASE TRANSITION OF K 3 C 60

Synchrotron Radiation Photoemission Study Of Yb-Intercalated C-60

Electronic structure and orientational phase transition of K3C60

Investigation of High Pressure Induced Orientational Phase Transition in C-60 Single Crystal

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Superconductivity in Sn-doped C60

Metal-Insulator Transition In Ca-Doped Sr14-Xcaxcu24o41 Systems Probed By Thermopower Measurements

Universality of the Intermediate Phase and High-Temperature Superconductivity in C60

In Situ Direct-Current Conductance Investigation Of Cu/C-60 Nano-Scale Granular Films

Orientational phase transition in C 60 single crystal under high pressure

X-Ray Photoemission Studies of Yb Intercalated C-60 Thin Film

Atomic observation of phase transition in layered SnS 2 driven by in situ heating and electron beam irradiation

Tuning of C-60 Energy Levels Using Orientation-Controlled Phthalocyanine Films

The influence of O2 on the phase transition of C60 crystal

Topological phase transition in Sb-doped Mg 3 Bi 2 monocrystalline thin films

Topological Phase Transition in Sb-doped Mg3Bi2 Monocrystalline Thin Films

Superconductor-Insulator Transitions in Exfoliated Bi2Sr2CaCu2O8+δ Flakes.