Investigation of C60 fullerenes modified g-GaN monolayer based on DFT study

Pengfei Shen,Enling Li,Yanpeng Zheng,Lin Zhang,Hongyuan Zhao,Deming Ma,Zhen Cui
DOI: https://doi.org/10.1016/j.vacuum.2021.110356
IF: 4
2021-09-01
Vacuum
Abstract:<p>We present a comprehensive investigation of C<sub>60</sub> fullerenes modified g-GaN monolayer (g-GaN/C<sub>60</sub> heterostructure) based on density functional theory (DFT). The results show that the g-GaN/C<sub>60</sub> heterostructure is most stable when the pentagonal center of C<sub>60</sub> molecule is adsorbed above N atom of the g-GaN monolayer. The heterostructure has a narrow direct energy gap 1.02 eV and type-II band alignment, the CBM is dominated by the C 2p orbital of the C<sub>60</sub> molecule, as well as the VBM consists of N 2p and Ga 3d orbitals of the g-GaN monolayer. This results in the separation of electrons and holes reducing the complexation of electrons and holes, improving photoelectric conversion efficiency and photocatalytic performance of the g-GaN monolayer. In addition, the broader UV to visible-light absorption spectrum of the g-GaN/C<sub>60</sub> heterostructure promises a potential application in photoelectric devices, especially for solar cells. The electronic and photoresponse properties of the g-GaN/C<sub>60</sub> heterostructure applied with vertical electric field are more excellent due to better transitions of electrons from the valence band to conduction band.</p>
materials science, multidisciplinary,physics, applied
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