Abstract:This comprehensive study utilises rigorous first-principles calculations to meticulously investigate the influence of uniaxial tensile strain on the electronic configuration and optical behaviours of aluminium-doped gallium sulphide. The study highlights the modulation of electrical properties and optical responses in Al-doped monolayer GaS through the application of tensile strain. Notably, with increasing tensile strain, the bandgap value of the pristine GaS exhibits a pronounced decline, whereas the Al-doped variant maintains a more stable bandgap. A deeper exploration of the state density reveals the emergence of novel electronic states and energy levels in both the pristine and Al-doped monolayer GaS systems as tensile strain is applied. Crucially, the stabilising effect of the doped Al atoms minimises variations in the state density profiles of the Al-doped monolayer GaS systems, in contrast to their pristine counterparts. This result implies that fine control of the electrical structure and optical characteristics of Al-doped monolayer GaS may be achieved by the application of uniaxial tensile strain. The optoelectronic characteristics of GaS and its doped systems are explained in detail by these discoveries, which also offer a crucial theoretical foundation and direction for the use of these materials in optoelectronic devices.

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Effect of strain on the effective mass of GaN and the mobility of AlGaN/GaN two-dimensional electron gas

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Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition