Abstract:A simple procedure has been developed for the processing of silicon wafers in order to facilitate the spatially resolved growth of thin solid films on their surfaces. Specifically, a combination of silylation and UV/ozonolysis was tested as a way to control the concentration of the surface hydroxo groups required for subsequent atomic layer deposition (ALD) of metals or oxides. Water contact angle measurements were used to evaluate the hydrophilicity/hydrophobicity of the surface, a proxy for OH surface coverage, and to optimize the UV/ozonolysis treatment. Silylation with hexamethyldisilazane, trichloro(octadecyl)silane, or trimethylchlorosilane was found to be an efficient way to block the hydroxo sites and to passivate the underlying surface, and UV/O3 treatments were shown to effectively remove the silylation layer and to regain the surface reactivity. Both O3 and 185 nm UV radiation were determined necessary for the removal of the silylation layer, and additional 254 nm radiation was found to enhance the process. Attenuated total reflection-infrared absorption spectroscopy was employed to assess the success of the silylation and UV/O3 removal steps, and atomic force microscopy data provided evidence for the retention of the original smoothness of the surface. Selective growth of HfO2 films via TDMAHf + H2O ALD was seen only on the UV/O3 treated surfaces; total inhibition of the deposition was observed on the untreated silylated surfaces (as determined by x-ray photoelectron spectroscopy and ellipsometry). Residual film growth was still detected on the latter if the ALD was carried out at high temperatures (250 °C), because the silylation layer deteriorates under such harsh conditions and forms surface defects that act as nucleation sites for the growth of oxide grains (as identified by electron microscopy and scanning electron microscopy). We believe that the silylation-UV/O3 procedure advanced here could be easily implemented for the patterning of surfaces in many microelectronic applications.

STUDIES ON THE REACTION OF VAPOR HF WITH SILICON DIOXIDE UNDER POLYMER FILM

Studies on the Interfacial Etching Reaction of Development-Free Vapor Photolithography

Running droplet of interfacial chemical reaction flow

Functionalization of Hydrogen-Terminated Silicon Via Surface-Initiated Atom-Transfer Radical Polymerization and Derivatization of the Polymer Brushes

Molecular Dynamics Simulation of Silicon Dioxide Etching by Hydrogen Fluoride Using the Reactive Force Field

Molecular Dynamics Study of Interaction between Fluorine Atoms and Silicon Surface

Preparation of HfO_(2)-SiO_(2) Sol-gel with Radiation Polymerization Property Glass and Studies on Property of X-Ray Lithography

Improved PECVD SixNy film as a mask layer for deep wet etching of the silicon

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

Fluorine‐containing species on the hydrofluoric acid etched silicon single‐crystal surface

Experimental study on HF etching of fused silica

Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfaces

Reaction Kinetics and Surface Properties of Fluorinated Copolymer Brushes on the Silicon Wafer

Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Spatial resolution in thin film deposition on silicon surfaces by combining silylation and UV/ozonolysis

Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride

Studies on Dialkoxysilane Hydrolysis Kinetics under Alkaline Conditions

Selective Functionalization of Silicon Surface Controlled by Metastable Helium Atom Beam for Patterning Chemisorbed Monolayer Molecular Assemblies

Reaction Mechanism and Selectivity Control of Si Compound ALE Based on Plasma Modification and F-Radical Exposure

Reactive Ion Etching of HfO2 Films