Abstract:Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a> and 0.02 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a>) in hydrofluoric (HF) acid of 24.5 precent concentration at different etching times (5 to 25 min). The irradiation has been achieved using laser beam of 2W power and 810 nm wavelength. We have studied the morphological and structural properties of PSi layers using the techniques of Xray Diffraction (XRD) and Scanning Electron Microscopy (SEM) and Gravimetric method. The Xray Diffraction data shows that the structure aspect of PSi layers remains crystalline as well as the decreasing of diffraction angle (thetaB) of Xray from PSi layers (29 to 26 degree) and increasing of the lattice parameter values of PSi structures with increasing of etching times from 5 to 25 min., and the resistivity of silicon substrates from 0.02 to 3.5 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a>. The nanocrystallite size is decreasing from (20.72 to 5.13 nm) with increasing of etching times, and the resistivity of silicon substrates. The SEM images shows that the values of pore width and PSi layer thickness increases from (0.5 to 6.25 micrometer) and (6.7 to 47 micrometer) respectively with increasing of etching times and silicon substrates resistivities, while the values of the thickness of walls between pores has been varied from (1.25 to 0.03 micrometer) with increasing of etching times and silicon substrates resistivities. The pore shape of pores has been varied from Cylindrical to Rectangular and to Starful with varied of etching conditions. Further the measured specific surface area of PSi layers has been increased from (7.43 to 235.35 m2/cm3) with increasing of etching times and silicon substrates resistivities.

The Effect of Etchant Composition on Film Structure During Laser-Assisted Porous Si Growth

Selected Two-Dimensional Effects in Gas Immersion Laser Doping of Unpatterned Silicon

The Effect of Different Wavelengths on Porous Silicon Formation Process

On the Role of the Pore Filling Medium in Photoluminescence from Photochemically Etched Porous Silicon

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

Effect of chemical etching combined with laser illumination on the photoluminescence of porous silicon

Hydrogen Bubbles and Formation of Nanoporous Silicon During Electrochemical Etching

Effect of silicon resistivity on its porosification using metal induced chemical etching

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films

Experimental Study on Evolution of Chemical Structure Defects and Secondary Contaminative Deposition during HF-Based Etching

Comparison of structures and hydrophobicity of femtosecond and nanosecond laser-etched surfaces on silicon

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Structural, Morphological and Electrical Properties of Porous Silicon Prepared Under Laser Illumination

Nanochannels in Fused Silica through NaOH Etching Assisted by Femtosecond Laser Irradiation

Molecular Dynamics Study of Interaction between Fluorine Atoms and Silicon Surface

The formation of well-defined crystalline structures by UV laser irradiation of amorphous silicon films

Morphological Aspects of Porous Silicon Prepared by Photoelectrochemical Etching

Understanding the effect of HF-based wet shallow etching on optical performance of reactive-ion-etched fused silica optics

Direct observation and quantification of nanosecond laser induced amorphization inside silicon

Laser micro/nano machining of silicon