Abstract:N-type hydrogenated nanocrystalline silicon (nc-Si:H) films were deposited by the plasma-enhanced chemical vapour deposition (PECVD) technique on p+-type crystal silicon (c-Si) substrates; then a kind of heterojunction structure of (n)nc-Si:H/(p+)c-Si was obtained. Both negative resistance in forward current–voltage (I–V) measurements and current staircases in reverse I–V experimental curves were observed from this heterojunction of (n)nc-Si:H/(p+)c-Si at 77 K. It was verified by the electrical experiments that this structure is a semiconductor heterojunction tunnelling diode. The forward current was considered to be dominated by interband tunnelling, excess and thermionic emission component. Within the reverse bias ranging from around 0 to −13 V, the reverse leakage current can be attributed to minority carriers instead of majority carriers tunnelling across the depletion layer of the heterojunction. By increasing the reverse applied voltage from about −13 V to −37 V, the reverse current can be ascribed to the injection of electrons via sequent resonant tunnelling through the Si nanocrystals quantum dots into the substrate. By further increasing the reverse bias, the reverse current can be assigned to carrier avalanche multiplication within the amorphous buffer layer in the depletion region to enhance the electron resonant tunnelling in the nc-Si:H layer. The results indicate that the (n)nc-Si:H/(p+)c-Si structure is a promising candidate for digital circuit applications.

A Study of Electrical Properties on Nc-Si/c-si Heterojunction Diodes

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Electrical Characterization of N-nanocrystalline/P-crystalline Silicon Heterojunctions

Resonant Tunneling Characteristics in Crystalline Silicon/Nanocrystalline Silicon Heterostructure Diodes

Transport Mechanism of Nanocrystalline-Silicon Film Tunnelling Diodes

Characterization and Modeling of N-N Si∕SiC Heterojunction Diodes

Electrical transporting properties of hydrogenated nanocrystalline silicon diode

Electrical characterization of N-type nanocrystalline silicon on p-type crystalline silicon (nc-Si:H/c-Si) heterojunctions

Quantum Tunneling Behavior Of Nanocrystalline Silicon/Crystalline Silicon Heterostructure Diode

Investigation on High Mobility Nanocrystalline Si with Crystalline Si Heterostructure

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon

Tunnelling in Heterojunction of N-Type Hydrogenated Nanocrystalline Silicon Film with P+-Type Crystal Silicon

Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction

Heterojunction Diodes Formed Using Thin-Film-C Containing Polycrystalline Diamond and Si

Current Conduction in Al/Si Nanocrystal Embedded Sio2/P-Si Diodes with Various Distributions of Si Nanocrystals in the Oxide

STUDY ON ELECTRICAL TRANSPORT MECHANISM OF DOPED NC-SI:H FILM

Electrical characteristics of SiO2/crystalline Si quantum dots/SiO2 double-barrier diode

Properties of N-Type Tetrahedral Amorphous Carbon (Ta-C)/p-type Crystalline Silicon Heterojunction Diodes

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Variable capacitance diodes of (p)nc-Si:H/(n)c-Si heterojunction

Fabrication and Electrical Characterization of Nanocrystalline ZnO/Si Heterojunctions