Abstract:N-type hydrogenated nanocrystalline silicon (nc-Si:H) films were deposited by the plasma-enhanced chemical vapour deposition (PECVD) technique on p+-type crystal silicon (c-Si) substrates; then a kind of heterojunction structure of (n)nc-Si:H/(p+)c-Si was obtained. Both negative resistance in forward current–voltage (I–V) measurements and current staircases in reverse I–V experimental curves were observed from this heterojunction of (n)nc-Si:H/(p+)c-Si at 77 K. It was verified by the electrical experiments that this structure is a semiconductor heterojunction tunnelling diode. The forward current was considered to be dominated by interband tunnelling, excess and thermionic emission component. Within the reverse bias ranging from around 0 to −13 V, the reverse leakage current can be attributed to minority carriers instead of majority carriers tunnelling across the depletion layer of the heterojunction. By increasing the reverse applied voltage from about −13 V to −37 V, the reverse current can be ascribed to the injection of electrons via sequent resonant tunnelling through the Si nanocrystals quantum dots into the substrate. By further increasing the reverse bias, the reverse current can be assigned to carrier avalanche multiplication within the amorphous buffer layer in the depletion region to enhance the electron resonant tunnelling in the nc-Si:H layer. The results indicate that the (n)nc-Si:H/(p+)c-Si structure is a promising candidate for digital circuit applications.

Current Conduction in Al/Si Nanocrystal Embedded Sio2/P-Si Diodes with Various Distributions of Si Nanocrystals in the Oxide

Resonant Tunneling Characteristics in Crystalline Silicon/Nanocrystalline Silicon Heterostructure Diodes

A Study of Electrical Properties on Nc-Si/c-si Heterojunction Diodes

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Transport Mechanism of Nanocrystalline-Silicon Film Tunnelling Diodes

Temperature-Dependent Charge Transport in Al/Al Nanocrystal Embedded Al2o3 Nanocomposite/P-Si Diodes

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Quantum Tunneling Behavior Of Nanocrystalline Silicon/Crystalline Silicon Heterostructure Diode

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Hopping Conduction in Assemblies of Hydrosilylated Silicon Nanocrystals

Resonant Tunneling of Si Nanocrystals Embedded in Al2O3 Matrix Synthesized by Vacuum Electron-Beam Co-Evaporation

Charging/Discharging of Silicon Nanocrystals Embedded in an Sio2 Matrix Inducing Reduction/Recovery in the Total Capacitance and Tunneling Current

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon

Current Conduction Mechanisms in Thermal Nitride and Dry Gate Oxide Grown on 4H-Silicon Carbide (Sic)

Carrier Transport in Films of Alkyl-Ligand-Terminated Silicon Nanocrystals

Tunnelling in Heterojunction of N-Type Hydrogenated Nanocrystalline Silicon Film with P+-Type Crystal Silicon

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Electrical Characterization of N-nanocrystalline/P-crystalline Silicon Heterojunctions

Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance