Abstract:Atomistic molecular dynamics simulations have been performed to explore the effect of interfacial bonding on the interphase properties of a nanocomposite system that consists of a silica nanoparticle and the highly cross-linked epoxy matrix. For the structural properties, results show that interfacial covalent bonding can broaden the interphase region by increasing the radial effect range of fluctuated mass density and oriented chains, as well as strengthen the interphase region by improving the thermal stability of interfacial van der Waals excluded volume and reducing the proportion of cis conformers of epoxy segments. The improved thermal stability of the interphase region in the covalently bonded model results in an increase of ∼21 K in the glass transition temperature (Tg) compared to that of the pure epoxy. It is also found that interfacial covalent bonding mainly restricts the volume thermal expansion of the model at temperatures near or larger than Tg. Furthermore, investigations from mean-square displacement and fraction of immobile atoms point out that interfacial covalent and noncovalent bonding induces lower and higher mobility of interphase atoms than that of the pure epoxy, respectively. The obtained critical interfacial bonding ratio when the interphase and matrix atoms have the same mobility is 5.8%. These results demonstrate that the glass transitions of the interphase and matrix will be asynchronous when the interfacial bonding ratio is not 5.8%. Specifically, the interphase region will trigger the glass transition of the matrix when the ratio is larger than 5.8%, whereas it restrains the glass transition of the matrix when the ratio is smaller than 5.8%.

Study on the Interfacial SiO/sub 2/ Layer of Silicon Wafer Direct Bonding

Study on interfacial SiO2 layer of silicon direct bonding

Research on Silicon-Glass Thermal Bonding with SiO2 Film Assist

Effect of Thin SiO2 Layer on Silicon-on-Glass Anodic Bonding

Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding

Modeling of Anodic Bonding with SiO2 Dielectric As Interlayer

Oxides Formation on Hydrophilic Bonding Interface in Plasma-Assisted Inp/Al2o3/Soi Direct Wafer Bonding

Quantification of Interfacial Voids Using Positron Annihilation Spectroscopy for Mechanism Study on SiCN Bonding and SiN Bonding

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Effect of Interfacial Bonding on Interphase Properties in SiO2/Epoxy Nanocomposite: A Molecular Dynamics Simulation Study.

Investigation of Plasma Activated Si-Si Bonded Interface by Infrared Image Based on Combination of Spatial Domain and Morphology

Observations of Interfaces in Direct Wafer-Bonded InP–GaAs Structures

Bonding Silicon Wafers with Reactive Multilayer Foils

In Situ Afm Investigation of Interfacial Morphology of Single Crystal Silicon Wafer Anode

Bonding mechanisms and electrical properties of Ge/Si and Si/Si bonded wafers achieved by thin microcrystalline Ge interlayer

Formation of Silicon on Plasma Synthesized SiOxNy and Reaction Mechanism

Interfacial properties of SiCf/SiC minicomposites with a scheelite coating

Three Steps Method of Hydrophilicity Treatment on Silicon Wafer Direct Bonding and Bonding Interface Electrical Properties

Study of InP/SOI Wafer Bonding Based on Wet Surface Activation Treatment

Development of a Classical Force Field for the Oxidised Si Surface: Application to Hydrophilic Wafer Bonding

Characterisation of interfacial bonding in Al2O3 coated SiC whisker reinforced TZP composites