Abstract:Raman scattering spectra of GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire substrate are investigated. Some weak peaks are also observed in two spectra besides the allowed E 2 and A 1(LO) phonon modes in Z(X-)Z backscattering geometry. The origins of these peaks are discussed and the differences between two spectra are compared. Two peaks at 640 and 660 cm -1 are observed both in the spectra of GaN and Mg-doped GaN samples. The 640 cm -1 peak is attributed to an overtone process of the highest acoustic-phonon branch at the zone boundary (L point). The peak at 660 cm -1 is attributed to the optical-phonon branch at the zone boundary or the local vibrational mode induced by defect. In the spectrum of Mg-doped GaN sample there is a broad feature near the two peaks. It is suggested that the broad feature arises from the local vibrational mode of Mg-N bond which superposed on the two peaks mentioned above or arises from defect-induced broaden. Two additional peaks at 276 cm -1 and 376 cm -1 are also observed in the spectrum of Mg-doped GaN sample. The peak at 276 cm -1 is the local vibrational mode of Mg-N bond and the peak at 376 cm -1 is the local vibrational mode of impurity- defect complex. The frequency of E 2 mode in Mg-doped GaN shifted to low energy side compared with GaN sample, and located at 568 cm -1 at room temperature. This indicated that the relaxation of residual stress existed in Mg-doped sample. The stress relaxation is contributed to Mg-induced generation of dislocation. Furthermore, electron-phonon interaction also can induce frequency shift of E 2 mode.

Raman scattering of GaN epilayer grown on MgAl2O4 substrate

Raman scattering spectra of GaN grown by MOCVD

Raman Scattering of GaN and Mg-doped GaN Films Grown by MOCVD

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Raman Analysis of E<sub>2</sub> (High) and A<sub>1</sub> (LO) Phonon to the Stress-Free GaN Grown on Sputtered AlN/Graphene Buffer Layer

Micro-Raman Scattering Study of Hexagonal InGaN Epitaxial Layer

Optical property studies of GaN films grown by MOCVD

X-ray Double Crystal Diffraction and Raman Spectra Measurements of AlP/GaP Short-Period Superlattices

Temperature Dependence of Raman Scattering in Single Crystal GaN Films

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Temperature Dependences of Raman Scattering in Different Types of GaN Epilayers

RAMAN SPECTROSCOPY STUDY ON LO PHONON-PLASMON COUPLED MODE IN GaN THIN FILMS

Temperature-dependent Ultraviolet Raman Scattering and Anomalous Raman Phenomenon of AlGaN/GaN Heterostructure.

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Tripathy Raman Scattering and PL Studies on AlGaN / GaN HEMT Layers on 200 Mm Si ( 111 ) A

Phonon Modes in AlGaN Alloy with AlGaN/GaN MQW Interlayer

Temperature-Dependent Raman Scattering of Phonon Modes and Defect Modes in GaN and p-Type GaN Films

Raman scattering study of GaN nanostructures obtained by bottom-up and top-down approaches

Temperature Characterization of Raman Scattering in an AlGaN/GaN Heterostructure

Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method

Temperature Dependence of the Raman-active Modes in the Semipolar (112¯2) Plane GaN Film