Abstract:A comprehensive understanding of phonon transport is essential to develop effective solutions for heat dissipation. Gallium nitride (GaN), a representative of third -generation power semiconductors, has been extensively studied regarding its thermodynamics and lattice dynamics. However, the temperature -dependent phonon properties, especially the anharmonicity at high temperatures, are poorly understood. Here, by combining inelastic neutron scattering (INS) experiments and calculations including the temperature effect based on machine learning potentials, we report the high -order phonon anharmonicity in GaN over a wide temperature range. Our calculations agree well with the experimental phonon dispersion, density of states and entropy, underlining the significance of anharmonicity of GaN at elevated temperatures. Moreover, considering the four -phonon processes, the calculated thermal conductivity is suppressed by 20%, and the anisotropy is also reduced gradually with increasing temperature. Such behavior arises mainly from the large four -phonon scattering channels between 20 and 30 meV, where the critical scattering rule for the three -phonon process is largely restricted at high temperatures. Our study highlights the importance of high -order phonon anharmonicity for thermal transport in GaN and provides a theoretical reference for thermal management in other related semiconductors.

Temperature Dependence of the Raman-active Modes in the Semipolar (112¯2) Plane GaN Film

Temperature Dependence Of The Raman-Active Modes In The Semipolar (11(2)Over-Bar2) Plane Gan Film

Investigation of Temperature Dependent Optical Modes in GexAs35-xSe65 Thin Films: Structure Specific Raman, FIR and Optical Absorption Spectroscopy

Temperature Dependences of Raman Scattering in Different Types of GaN Epilayers

Temperature Dependence of Raman Scattering in Single Crystal GaN Films

Study on the Relationships Between Raman Shifts and Temperature Range Fora-Plane GaN Using Temperature-Dependent Raman Scattering

Raman‐scattering Probe of Anharmonic Effects Due to Temperature and Composition in InGaN

Temperature-Dependent Raman Scattering of Phonon Modes and Defect Modes in GaN and p-Type GaN Films

Temperature-dependent Ultraviolet Raman Scattering and Anomalous Raman Phenomenon of AlGaN/GaN Heterostructure.

Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding M-, A- and C-Plane GaN Substrates

Temperature-dependent Photoluminescence Spectra of GaN Epitaxial Layer Grown on Si (111) Substrate

Temperature Characterization of Raman Scattering in an AlGaN/GaN Heterostructure

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

Temperature Dependence of Raman Scattering in GaMnN

Temperature Dependence of Raman Scattering in GeSn Films

Polarization and Temperature Dependence of Photoluminescence of M-Plane GaN Grown on Γ-Lialo2 (100) Substrate

Temperature-dependent Polarization Characteristics in Al0.25Ga0.75N/AlN/GaN Heterostructure

Comparative Analysis of Temperature-dependent Raman Spectra of GaN and GaN/Mg Films

High-order Phonon Anharmonicity and Thermal Conductivity in GaN

Temperature Dependent Photon Emission Spectra of Free Excitons in Phonon Field of GaN

Optical property studies of GaN films grown by MOCVD