Abstract:The effects on the photoluminescence (PL) from Si nanocrystals embedded in a SiO2 matrix (Si-NCs/SiO2) by annealing in air have been examined, and the correlation between the PL properties and the pas sivation of luminescence-quenching defects at the Si nanocrystal/SiO2 interface has been studied. Si-NCs/SiO2 were fabricated by annealing amorphous silicon suboxide (a-SiOx) in a N-2 atmosphere at 1100 degrees C and the passivation of Si-NCs/SiO2 was performed by annealing Si-NCs/SiO2 in air at temperatures ranging from 400 to 800 degrees C for varied times. The heating of Si-NCs/SiO2 in air is very effective for passivating dangling bonds and an enhancement about 5 times in PL intensity was obtained. High-temperature passivation in air is accompanied by oxidation of Si nanocrystals. Additional N2-treatment of the passivated SiNCs/SiO2 at elevated temperatures depassivates Si-NCs/SiO2, generating new dangling bonds which can also be pas sivated in the subsequent repassivation process. The effect of pas sivation on the PL intensity is reversible, while high-temperature pas sivation results in an irreversible blue shift of PL spectra. PL decay time can be indicative of passivating or generating of dangling bonds. (C) 2014 Elsevier B.V. All rights reserved.

GREEN/BLUE LIGHT EMISSION AND LUMINESCENT-MECHANISM OF NANOCRYSTALLINE SILICON-EMBEDDED IN SILICON OXIDE THIN FILM

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix

PHOTOLUMINESCENCE FROM SiC NANOCRYSTALS EMBEDDED IN SiO

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Luminescent Properties Of Nano-Crystalline Silicon Films Embedded In Sio2

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

On the Origin of the 417 and 437 Nm Double-Peak Emission in Porous Si with Crystallite Sizes Smaller Than 3.0 Nm

Nanocrystal and Interface Defects Related Photoluminescence in Silicon-Rich Al2O3 Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

Enhanced Green to Red Photoluminescence in Thermally Annealed of Amorphous-Si:H/sio2 Multilayers

Correlation Between Luminescence and Structural Evolution of Si-rich Silicon Oxide Film Annealed at Different Temperatures

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Luminescence from Si/SiO 2 with Si Implantation

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Origin of Blue Photoluminescence from Colloidal Silicon Nanocrystals Fabricated by Femtosecond Laser Ablation in Solution