Preparation and characterization of Ba0.8Sr0.2TiO3 thin film by sol-gel method

LI Yan-hong,ZHOU Ke-chao,ZHUANG Hou-rong,ZHANG Yan,ZHANG Dou

2014-01-01

Abstract:Ba0.8Sr0.2TiO3 (BST) ferroelectric thin films with perovskite structure were prepared on Si and Pt/Ti/SiO2/Si substrates by sol-gel method. The heat-treatment technology (TG-DSC), X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and B1500A semiconductor device analyzer were employed to analyze the phase structure, microstructure and dielectric property of the BST thin films. The results show that BST thin films with good crystallinity and high density are obtained after annealing at 800℃for 15 min under oxygen atmosphere, their average grain size and root mean square roughness (RMS) are 30~40 nm and 5.80 nm, respectively. The dielectric constant and dielectric loss increase with the increase of the thickness of the BST thin films ranging from 160 nm to 378 nm. The dielectric constant of the BST thin film with the thickness of 300 nm decreases with the increase of temperature because of size effect, the Curie temperature is below the room temperature.