Low Temperature Sintering of Li 2 (mg 0.3 Zn 0.7 )ti 3 O 8 -0.12Tio 2 Microwave Dielectric Ceramics with Controllable Grain Size

Jianxi Tong,Juehui Zhou,Hui Yang,Qilong Zhang,Wei Huang,Yuan You
DOI: https://doi.org/10.1007/s10854-014-1725-5
2014-01-01
Journal of Materials Science Materials in Electronics
Abstract:The effects of BaO-B2O3-SiO2 (BBS) frit on sinterability, microstructure and microwave dielectric properties of Li2(Mg0.3Zn0.7)Ti3O8-0.12TiO2 (LMZT) ceramics were systematically investigated. BBS frit can effectively lower the sintering temperature of LMZT ceramics to below 900 °C. Suitable BBS frit addition can accelerate the growth of the LMZT grains while inhibit the abnormal grain growth at the same time. The LMZT ceramics with 2 wt% BBS frit sintered at 900 °C for 3 h show homogeneous microstructure composed of 5–10 μm grains and excellent dielectric properties: ε r  = 24.1, Q × f = 21,980 GHz, τ f  = −4.1 ppm/ °C. It is compatible with Ag electrodes, which makes it a potential candidate material for low temperature co-fired ceramics technology application.
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