Effect of Sputtering Pressure on Optical and Electrical Properties of Boron-doped ZnO Thin Films

Qi-lin HUA,Pei-zhi YANG,Wen YANG,Rui FU,Shuang DENG,Liu-jun PENG
DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2013.05.011
2013-01-01
Abstract:ZnO:B thin films were deposited on glass substrate by pulsed magnetron sputtering at room temperature. Hall measurement, UV-Vis-NIR spectrometer and the Pointwise unconstrained optimization method were employed to investigate the effects of sputtering pressure on optical and electrical properties of ZnO:B thin films. The results showed that the average optical transmittance of ZnO:B thin films was over 80% in visible spectral region, while near-infrared transmittance and resistivity of the film were proportional to the sputtering pressure. The refractive index n has a declined trend as the sputtering pressure decreases, with values of n ranging from 1.92 to 2.09. The lowest resistivity was obtained at sputtering pressure of 0.1 Pa, corresponding to the small optical bandgap (Eg=3.463 eV).
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