Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Preparation of amorphous carbon films by layer-by-layer hydrogen plasma annealing method and their luminescence properties

Structure and photoelectric properties of hydrogenated amorphous silicon-germanium alloys produced by high hydrogen dilution method

High temperature annealing of hydrogenated amorphous silicon carbide thin films

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Photoluminescence of Amorphous Carbon Films Fabricated by Layer-By-Layer Hydrogen Plasma Chemical Annealing Method

Improvement of electron field emission from amorphous carbon films due to hydrogen plasma chemical annealing effect

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

The effect of hydrogen plasma chemical annealing on electron field emission of amorphous carbon films

Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process

OPTICAL AND ELECTRICAL PROPERTIES OF ANNEALING SiNx: H THIN FILM

Device-grade A-Sige:H Alloys Prepared by Nanometer Deposition/h2 Plasma Annealing Method

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Properites of Hydrogenated Amorphous Silicon Carbide Films Irradiated by Excimer Pulse Laser

Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films

Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films