Abstract:Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal–organic vapor-phase epitaxy -grown epitaxial layer of p-doped GaN. Circular 200 μm-sized violet-emitting LEDs with a p-n contact distance as low as 3 μm exhibit a turn-on voltage of 3 V, and an emitting optical power at 395 nm of a few microwatts. Electroluminescence spectrum investigation shows that the emissive process can be ascribed to four different recombination transitions, dominated by the electron-hole recombinations on the ZnO side.

Blue light emission from the heterostructured ZnO/InGaN/GaN

Study on the Electroluminescence Properties of Diodes Based on N-Zno/p-nio/p-si Heterojunction

Study of Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light Emitting Diodes

Homogeneous ZnO nanowire arrays p-n junction for blue light-emitting diode applications.

Ultraviolet Electroluminescence from ZnO-based Light-Emitting Diode with P-Zno:N/n-gan:si Heterojunction Structure

Low-voltage blue light emission from n-ZnO/p-GaN heterojunction formed by RF magnetron sputtering method

Ultraviolet Electroluminescence Properties from Devices Based on N-Zno/I-Nio/P-Si Light-Emitting Diode

Ultraviolet Electroluminescence from N-Zno/nio/p-gan Light-Emitting Diode Fabricated by MOCVD

Blue/Green Electroluminescence From A Zno Nanorods/P-Gan Heteroj Unction Light Emitting Diode Under Different Reverse Bias

Fabrication of a High‐Brightness Blue‐Light‐Emitting Diode Using a ZnO‐Nanowire Array Grown on P‐gan Thin Film

Fabrication and emission properties of a n-ZnO/p-GaN heterojunction light-emitting diode

Saturated Blue-Violet Electroluminescence From Single Zno Micro/Nanowire And P-Gan Film Hybrid Light-Emitting Diodes

Excitonic Electroluminescence from ZnO-based Heterojunction Light Emitting Diodes

Ultraviolet/orange Bicolor Electroluminescence from an N-Zno/n-gan Isotype Heterojunction Light Emitting Diode

Fabrication and Characterization of High Quality N-Zno/p-gan Heterojunction Light Emission Diodes

Tunable Electroluminescence from N-Zncdo/p-gan Heterojunction

Introducing Ga 2 O 3 Thin Films As Novel Electron Blocking Layer to ZnO/ P -Gan Heterojunction LED

Ultraviolet Electroluminescence of Zno Based Heterojunction Light Emitting Diode

Blue-Yellow Zno Homostructural Light-Emitting Diode Realized By Metalorganic Chemical Vapor Deposition Technique

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction