Abstract:In recent years, GaN materials have been applied to the field of optoelectronic devices due to their excellent photoelectric properties, especially in the field of light-emitting diodes, which has attracted considerable attention. In this article, we use structural engineering methods to further improve the performance of GaN-based ultraviolet light-emitting diodes. The magnetron sputtering and annealing treatment were used to prepare ultraviolet light-emitting diodes based on p-NiO/i-Ga2O3/n-GaN and p-NiO/n-GaN heterojunction structure. X-ray diffractometer, field emission scanning electron microscope and ultraviolet-visible spectrophotometer were used to study the crystal quality, surface morphology, and optical properties of Ga2O3 film. Compared with the p-NiO/n-GaN heterojunction diode, the p-NiO/i-Ga2O3/n-GaN heterojunction diode exhibits better rectification characteristics and more excellent electroluminescence characteristics. Under the injection voltage of 35 V, the EL spectrum intensity of p-NiO/i-Ga2O3/n-GaN heterojunction diode is nearly 37 times higher than that of p-NiO/n-GaN heterojunction diode. Finally, the working mechanism of the electroluminescence is analyzed in detail through the energy band diagram of the two diodes.

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