Abstract:Nominally undoped ZnO films were deposited by reactive sputtering on the lightly boron-doped (p−) and heavily boron-doped (p+) silicon substrates. The sputtered ZnO films were identified to be highly ⟨002⟩ oriented in crystallinity and n type in electrical conductivity. The current-voltage (I-V) characteristics revealed that the ZnO∕p−-Si heterojunction exhibited well-defined rectifying behavior while the ZnO∕p+-Si heterojunction did not possess rectifying function. As for the ZnO∕p+-Si heterojunction, it was electroluminescent to a certain extent in the visible region under sufficient forward bias with the positive voltage on the silicon substrate, while it emitted ultraviolet light characteristics of near-band-edge emission of ZnO under the reverse bias, which significantly dominated the visible emission. In contrast to the ZnO∕p+-Si heterojunction, the ZnO∕p−-Si heterojunction did not exhibit detectable electroluminescence (EL) under either forward or reverse bias. The I-V characteristics and EL mechanism of the above-mentioned heterojunctions have been tentatively explained in terms of the energy-band structures of the heterojunctions.

Study on the Electroluminescence Properties of Diodes Based on N-Zno/p-nio/p-si Heterojunction

Study on the Luminescence Properties of N-Zno/I-Nio/N-Gan Isotype Heterojunction Diodes

Ultraviolet Electroluminescence Properties from Devices Based on N-Zno/I-Nio/P-Si Light-Emitting Diode

Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Ultraviolet Electroluminescence from N-Zno/nio/p-gan Light-Emitting Diode Fabricated by MOCVD

Ultraviolet Electroluminescence from ZnO-based Light-Emitting Diode with P-Zno:N/n-gan:si Heterojunction Structure

Fabrication and emission properties of a n-ZnO/p-GaN heterojunction light-emitting diode

Excitonic Electroluminescence from ZnO-based Heterojunction Light Emitting Diodes

Ultraviolet and Visible Electroluminescence from N-Zno∕siox∕(n,p)-si Heterostructured Light-Emitting Diodes

Electroluminescent And Transport Mechanisms Of N-Zno/P-Si Heterojunctions

Ultraviolet Electroluminescence from N-Zno/p-nio Heterojunction Light-Emitting Diode

Fabrication of n-ZnO/p-Si heterojunctions by LP-MOCVD and their electroluminescence properties

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Study on the Properties of MgxZn1−xO-based Homojunction Light-Emitting Diodes Fabricated by MOCVD

High-Performance Ultraviolet Light-Emitting Diodes Using N-Zno/p-hbn/p-gan Contact Heterojunctions.

Ultraviolet Electroluminescence of Zno Based Heterojunction Light Emitting Diode

Near Infrared Electroluminescence from N-Inn/p-nio Heterojunction Light-Emitting Diode

Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode