Abstract:Realization of pure and stable ultraviolet electroluminescence (UV EL) of ZnO light-emitting diode (LED) is still a challenging issue, due to complicated defects of intrinsic ZnO and the corresponding device interfaces. In this paper, we demonstrated a simple & feasible method to fabricate n-ZnO/AlN/p-GaN heterojunctions light-emitting devices. First, the vertically aligned ZnO nanorods (NRs) have been prepared as high quality active layer, and the nanostructured heterojunction LED arrays were constructed by directly bonding ZnO NRs onto AlN-coated p-GaN wafer. By optimizing the AlN layer thickness to be 20 nm, a strong and pure ultraviolet emission located at 387 nm can be observed. The energy band alignment of n-ZnO/AlN (20 nm)/p-GaN heterojunction LED has been studied by using X-ray photoelectron spectroscopy (XPS), the valence band offset between AlN and GaN was calculated to be 0.34 eV. On the other side, the conduction band offset (as large as 3.28 eV) between AlN and ZnO can block the flow of electrons from ZnO to p-GaN. Thus, electron-hole recombination takes place in the ZnO layer, and a pure UV EL could be observed. Our results provide a significant approach toward future of pure ultraviolet optoelectronic LEDs.

Ultraviolet Electroluminescence from N-Zno/p-nio Heterojunction Light-Emitting Diode

Ultraviolet Electroluminescence Properties from Devices Based on N-Zno/I-Nio/P-Si Light-Emitting Diode

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Ultraviolet Electroluminescence from ZnO-based Light-Emitting Diode with P-Zno:N/n-gan:si Heterojunction Structure

Ultraviolet Electroluminescence of Zno Based Heterojunction Light Emitting Diode

Ultraviolet Electroluminescence from N-Zno/nio/p-gan Light-Emitting Diode Fabricated by MOCVD

Ultraviolet Electroluminescence from N-Zno:Ga/p-zno:n Homojunction Device on Sapphire Substrate with P-Type ZnO:N Layer Formed by Annealing in N2O Plasma Ambient

Ultraviolet/orange Bicolor Electroluminescence from an N-Zno/n-gan Isotype Heterojunction Light Emitting Diode

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Ultraviolet and Visible Electroluminescence from N-Zno∕siox∕(n,p)-si Heterostructured Light-Emitting Diodes

Ultraviolet Electroluminescence from ZnO-based Heterojunction Light-emitting Diodes Fabricated on p-GaAs Substrate

Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes

Fairly Pure Ultraviolet Electroluminescence from Zno-Based Light-Emitting Devices

Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with P-Type ZnO:N Layer Formed by Radical N 2 O Doping

Study on the Electroluminescence Properties of Diodes Based on N-Zno/p-nio/p-si Heterojunction

Ultraviolet Electroluminescence from Nanostructural SnO2-based Heterojunction with High-Pressure Synthesized Li-doped ZnO As a Hole Source

Ultraviolet Electroluminescence From n-ZnO–SiO$_{2}$–ZnO Nanocomposite/p-GaN Heterojunction Light-Emitting Diodes at Forward and Reverse Bias

Dominant Ultraviolet Electroluminescence from P-Zno:As/N-Sic(6h) Heterojunction Light-Emitting Diodes

Ultraviolet electroluminescence from n -ZnO/ i -MgO/p + -GaN heterojunction light-emitting diodes fabricated by RF-magnetron sputtering

Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode

Interface Control for Pure Ultraviolet Electroluminescence from Nano-Zno-based Heterojunction Devices.