Ultraviolet Electroluminescence from Nanostructural SnO2-based Heterojunction with High-Pressure Synthesized Li-doped ZnO As a Hole Source

Rui Deng,Jinliang Zhao,Duanyi Zhang,Jieming Qin,Bin Yao,Jing Song,Dayong Jiang,Yongfeng Li
DOI: https://doi.org/10.1016/j.ceramint.2018.11.114
IF: 5.532
2019-01-01
Ceramics International
Abstract:We report an ultraviolet (UV) electroluminescence (EL) in n-SnO2/p-ZnO heterojunction light-emitting diodes with the nanostructural SnO2 as an n-type layer and the Li-doped ZnO (ZnO:Li) synthesized by high-temperature high-pressure (HTHP) method as a high hole concentration p-type layer. Two kinds of SnO2 nanostructures including nanobelts (NBs) and nanowires (NWs) were used to fabricate n-type layers in the heterojunctions. The two heterojunctions with different SnO2 nanostructures demonstrate different light-emission feature in EL measurements. The SnO2 NBs/p-ZnO heterojunction shows a blue emission band centered at 416 nm under forward-bias voltage. A strong UV emission peak located at 391 nm was observed for the SnO2 NWs/p-ZnO heterojunction. Photoluminescence (PL) spectra indicate that the difference in EL is attributed to morphology-dependent light-emission feature in nanostructural SnO2 layer. Our results suggest that the nanostructural SnO2/ZnO:Li heterojunction is a potential and promising system in the UV optoelectronic field.
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