Abstract:Realization of pure and stable ultraviolet electroluminescence (UV EL) of ZnO light-emitting diode (LED) is still a challenging issue, due to complicated defects of intrinsic ZnO and the corresponding device interfaces. In this paper, we demonstrated a simple & feasible method to fabricate n-ZnO/AlN/p-GaN heterojunctions light-emitting devices. First, the vertically aligned ZnO nanorods (NRs) have been prepared as high quality active layer, and the nanostructured heterojunction LED arrays were constructed by directly bonding ZnO NRs onto AlN-coated p-GaN wafer. By optimizing the AlN layer thickness to be 20 nm, a strong and pure ultraviolet emission located at 387 nm can be observed. The energy band alignment of n-ZnO/AlN (20 nm)/p-GaN heterojunction LED has been studied by using X-ray photoelectron spectroscopy (XPS), the valence band offset between AlN and GaN was calculated to be 0.34 eV. On the other side, the conduction band offset (as large as 3.28 eV) between AlN and ZnO can block the flow of electrons from ZnO to p-GaN. Thus, electron-hole recombination takes place in the ZnO layer, and a pure UV EL could be observed. Our results provide a significant approach toward future of pure ultraviolet optoelectronic LEDs.

Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with P-Type ZnO:N Layer Formed by Radical N 2 O Doping

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Realization of Ultraviolet Electroluminescence from ZnO Homojunction with N-Zno∕p-zno:As∕gaas Structure

Fairly Pure Ultraviolet Electroluminescence from Zno-Based Light-Emitting Devices

Ultraviolet Electroluminescence from ZnO-based Light-Emitting Diode with P-Zno:N/n-gan:si Heterojunction Structure

Ultraviolet Electroluminescence from N-Zno:Ga/p-zno:n Homojunction Device on Sapphire Substrate with P-Type ZnO:N Layer Formed by Annealing in N2O Plasma Ambient

Ultraviolet Electroluminescence Properties from Devices Based on N-Zno/I-Nio/P-Si Light-Emitting Diode

Ultraviolet Electroluminescence from N-Zno/p-nio Heterojunction Light-Emitting Diode

Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

Fabrication of ZnO p-n homojunction by ultrasonic spray pyrolysis and its electroluminescence properties

Ultraviolet Electroluminescence of Zno Based Heterojunction Light Emitting Diode

Ultraviolet Electroluminescence from N-Zno/nio/p-gan Light-Emitting Diode Fabricated by MOCVD

ZnO Light-Emitting Diodes Fabricated on Si Substrates with Homobuffer Layers

P-Type ZnO and ZnO P-N Homojunction LED by Using Activated N_2 Doping

Ultraviolet Electroluminescence from ZnO-based Heterojunction Light-emitting Diodes Fabricated on p-GaAs Substrate

Electroluminescence from N-Zno/p-zno : Sb Homojunction Light Emitting Diode on Sapphire Substrate with Metal–organic Precursors Doped P-Type ZnO Layer Grown by MOCVD Technology

Fabrication and Characterization of High Quality N-Zno/p-gan Heterojunction Light Emission Diodes

Interface Control for Pure Ultraviolet Electroluminescence from Nano-Zno-based Heterojunction Devices.

Blue-Yellow Zno Homostructural Light-Emitting Diode Realized By Metalorganic Chemical Vapor Deposition Technique

Ultraviolet and Visible Electroluminescence from N-Zno∕siox∕(n,p)-si Heterostructured Light-Emitting Diodes