Abstract:Realization of pure and stable ultraviolet electroluminescence (UV EL) of ZnO light-emitting diode (LED) is still a challenging issue, due to complicated defects of intrinsic ZnO and the corresponding device interfaces. In this paper, we demonstrated a simple & feasible method to fabricate n-ZnO/AlN/p-GaN heterojunctions light-emitting devices. First, the vertically aligned ZnO nanorods (NRs) have been prepared as high quality active layer, and the nanostructured heterojunction LED arrays were constructed by directly bonding ZnO NRs onto AlN-coated p-GaN wafer. By optimizing the AlN layer thickness to be 20 nm, a strong and pure ultraviolet emission located at 387 nm can be observed. The energy band alignment of n-ZnO/AlN (20 nm)/p-GaN heterojunction LED has been studied by using X-ray photoelectron spectroscopy (XPS), the valence band offset between AlN and GaN was calculated to be 0.34 eV. On the other side, the conduction band offset (as large as 3.28 eV) between AlN and ZnO can block the flow of electrons from ZnO to p-GaN. Thus, electron-hole recombination takes place in the ZnO layer, and a pure UV EL could be observed. Our results provide a significant approach toward future of pure ultraviolet optoelectronic LEDs.

High-Performance Ultraviolet Light-Emitting Diodes Using N-Zno/p-hbn/p-gan Contact Heterojunctions.

High-performance Ultraviolet-Blue Light-Emitting Diodes Based on an N-Zno Nanowall Networks/p-Gan Heterojunction

Ultraviolet Electroluminescence from N-Zno/nio/p-gan Light-Emitting Diode Fabricated by MOCVD

Ultraviolet Electroluminescence from ZnO-based Light-Emitting Diode with P-Zno:N/n-gan:si Heterojunction Structure

Fabrication and Emission Properties of a N-Zno/p-gan Heterojunction Light-Emitting Diode

Improved Ultraviolet Emission Performance from Polarization-Engineered N-Zno/P-Gan Heterojunction Diode

The Ultralow Driven Current Ultraviolet-Blue Light-Emitting Diode Based on N-Zno Nanowires/I-Polymer/P-Gan Heterojunction

The Underlying Micro-Mechanism of Performance Enhancement of Non-Polar N-Zno/p-algan Ultraviolet Light Emitting Diode with I-Zno Inserted Layer

Interface Control for Pure Ultraviolet Electroluminescence from Nano-Zno-based Heterojunction Devices.

Recent progress in ZnO-based heterojunction ultraviolet light-emitting devices

Fabrication and Characterization of High Quality N-Zno/p-gan Heterojunction Light Emission Diodes

Ultraviolet Electroluminescence Properties from Devices Based on N-Zno/I-Nio/P-Si Light-Emitting Diode

Study on the Electroluminescence Properties of Diodes Based on N-Zno/p-nio/p-si Heterojunction

Improvement Of Electroluminescence Performance By Integration Of Zno Nanowires And Single-Crystalline Films On Zno/Gan Heterojunction

Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer

Fabrication of a High‐Brightness Blue‐Light‐Emitting Diode Using a ZnO‐Nanowire Array Grown on P‐gan Thin Film

Ultraviolet Electroluminescence from N-Zno:Ga/p-zno:n Homojunction Device on Sapphire Substrate with P-Type ZnO:N Layer Formed by Annealing in N2O Plasma Ambient

Dominant UV emission from p-MgZnO/n-GaN light emitting diodes

Low-voltage blue light emission from n-ZnO/p-GaN heterojunction formed by RF magnetron sputtering method