Anisotropic Topological Surface States on High-Index Bi2se3 Films

Zhongjie Xu,Xin Guo,Mengyu Yao,Hongtao He,Lin Miao,Lu Jiao,Hongchao Liu,Jiannong Wang,Dong Qian,Jinfeng Jia,Wingkin Ho,Maohai Xie
DOI: https://doi.org/10.1002/adma.201202936
IF: 29.4
2013-01-01
Advanced Materials
Abstract:A high-index topological insulator thin film, Bi2 Se3 (221), is grown on a faceted InP(001) substrate by molecular-beam epitaxy (see model in figure (a)). Angle-resolved photoemission spectroscopy measurement reveals the Dirac cone structure of the surface states on such a surface (figure (b)). The Fermi surface is elliptical (figure (c)), suggesting an anisotropy along different crystallographic directions. Transport studies also reveal a strong anisotropy in Hall conductance.
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