Abstract:The trigger voltage walk-in effect has been investigated by designing two different laterally diffused metal—oxide—semiconductor (LDMOS) transistors with an embedded silicon controlled rectifier (SCR). By inserting a P+ implant region along the outer and the inner boundary of the N+ region at the drain side of a conventional LDMOS transistor, we fabricate the LDMOS-SCR and the SCR-LDMOS devices with a different triggering order in a 0.5 μm bipolar-CMOS-DMOS process, respectively. First, we perform transmission line pulse (TLP) and DC-voltage degradation tests on the LDMOS-SCR. Results show that the trigger voltage walk-in effect can be attributed to the gate oxide trap generation and charge trapping. Then, we perform TLP tests on the SCR-LDMOS. Results indicate that the trigger voltage walk-in effect is remarkably reduced. In the SCR-LDMOS, the embedded SCR is triggered earlier than the LDMOS, and the ESD current is mainly discharged by the parasitic SCR structure. The electric potential between the drain and the gate decreases significantly after snapback, leading to decreased impact ionization rates and thus reduced trap generation and charge trapping. Finally, the above explanation of the different trigger voltage walk-in behavior in LDMOS-SCR and SCR-LDMOS devices is confirmed by TCAD simulation.

A Method to Prevent Strong Snapback in LDNMOS for ESD Protection

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Improved LDMOS for ESD Protection of High Voltage BCD Process

A Modified LDMOS Device with Improved ESD Protection Performance

ESD Protection of NMOS Device at Different Gate Bias

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

Substrate-engineered GGNMOS for low trigger voltage ESD in 65 nm CMOS process.

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

A Novel Nldmos with A High Ballast Resistance for Esd Protection

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

A Double Snapback SCR ESD Protection Scheme for 28 Nm CMOS Process.

A reduced surface current LDMOS with stronger ESD robustness

ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect

Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.