Abstract:During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of Si$_x$C$_{1-x}$ as an absorber layer in solar cells. A significant reduction in the annealing time may suppress the crystallization of the SiC matrix while maintaining the formation of Si NC. In this study, we investigated the crystallization of stoichiometric SiC and Si-rich SiC using conventional rapid thermal annealing (RTA) and nonequilibrium millisecond range flash lamp annealing (FLA). The investigated Si$_x$C$_{1-x}$ films were prepared by plasma-enhanced chemical vapor deposition and annealed at temperatures from 700${\deg}$C to 1100${\deg}$C for RTA and at flash energies between 34 J/cm$^2$ and 62 J/cm$^2$ for FLA. GIXRD and FTIR were conducted to investigate hydrogen effusion, Si and SiC NC growth, and SiC crystallinity. Both the Si content and the choice of the annealing process affect the crystallization behavior. It is shown that under certain conditions, FLA can be successfully utilized for the formation of Si NC in a SiC matrix, which closely resembles Si NC in a SiC matrix achieved by RTA. The samples must have excess Si, and the flash energy should not exceed 40 J/cm$^2$ and 47 J/cm$^2$ for Si$_{0.63}$C$_{0.37}$ and Si$_{0.77}$C$_{0.23}$ samples, respectively. Under these conditions, FLA succeeds in producing Si NC of a given size in less crystalline SiC than RTA does. This result is discussed in terms of nucleation and crystal growth using classical crystallization theory. For FLA and RTA samples, an opposite relationship between NC size and Si content was observed and attributed either to the dependence of H effusion on Si content or to the optical absorption properties of the materials, which also depend on the Si content.

Microstructure characterization of Si/C multilayer thin films

Microstructure Evolution of Si Nanocrystals in Si/C Multilayer Films

Microstructure and Micromechanical Properties of SiC-W Multilayer Films

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Microstructure Modulation of Silicon Planted Glass with Low Mirror Reflection

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Structure Studies of Microcrystalline Silicon Thin Film Using Raman Scattering and Photo Thermal Deflection Spectra

Microstructure and photoluminescence properties of as-deposited and annealed Si-rich a-Si1−xCx:H films

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization

Microstructure of nano-laminated SiC/W film grown by magnetron sputtering

Formation of silicon nanocrystals in silicon carbide using flash lamp annealing

Transmission Electron Microscopy Observation of Constrained Crystallization in A-Sih/A-Sinxh Multilayer Film

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Microstructure Evolution in Magnetron-Sputtered WC/SiC Multilayers with Varied WC Layer Thicknesses

Structural Relaxation of Amorphous Silicon Carbide Thin Films in Thermal Annealing

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Microstructure Characterization of Oxidized Nanocrystalline Si:H Film by Transmission Electron Microscopy

Layer-thickness-dependent Formation of Si-nanocrystals Embedded in Amorphous Si/SiO2 Multilayers