Abstract:Recent advances in the theory and experimental realization of ferromagnetic semiconductors give hope that a new generation of microelectronic devices based on the spin degree of freedom of the electron can be developed. This review focuses primarily on promising candidate materials (such as GaN, GaP and ZnO) in which there is already a technology base and a fairly good understanding of the basic electrical and optical properties. The introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. There are a number of other potential dopant ions that could be employed (such as Fe, Ni, Co, Cr) as suggested by theory [see, for example, Sato and Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 39, L555 (2000)]. Growth of these ferromagnetic materials by thin film techniques, such as molecular beam epitaxy or pulsed laser deposition, provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is complex and appears to depend on a number of factors, including Mn–Mn spacing, and carrier density and type. For example, in a simple Ruderman–Kittel–Kasuya–Yosida carrier-mediated exchange mechanism, the free-carrier/Mn ion interaction can be either ferromagnetic or antiferromagnetic depending on the separation of the Mn ions. Potential applications for ferromagnetic semiconductors and oxides include electrically controlled magnetic sensors and actuators, high-density ultralow-power memory and logic, spin-polarized light emitters for optical encoding, advanced optical switches and modulators and devices with integrated magnetic, electronic and optical functionality.

Room Temperature Gan-Based Spin Polarized Emitters

Development of room temperature spin polarised emitters

Modulating Room Temperature Spin Injection into GaN Towards the High-Efficiency Spin-Light Emitting Diodes

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Room Temperature Ferromagnetism of Gan : Mn Thin Films Grown by Low Pressure Metal-Organic Chemical Vapor Deposition by Mn Periodic Delta-Doping

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Seebeck and Spin Seebeck Effect in Gd-doped GaN Thin Films for Thermoelectric Devices and Applications

Room Temperature Ferromagnetism in Mn-doped Γ-Ga2o3 with Spinel Structure

Growth-Controlled Engineering of Magnetic Exchange Interactions in Single Crystalline GaCoZnO1-v Epitaxial Films with High Co Concentration

The melilite-type compound (Sr$_{1-x}$,$A_x$)$_2$MnGe$_2$S$_6$O ($A$=K, La) being a room temperature ferromagnetic semiconductor

Room-temperature ferromagnetic semiconductor Fe-doped β-Ga2O3 thin films with high saturation magnetization and low coercivity

Wide band gap ferromagnetic semiconductors and oxides

Room-Temperature Ferromagnetism of Ga 1− X Mn X N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

Properties of MOCVD-Grown GaN:Gd Films for Spintronic Devices

Room temperature optically detected magnetic resonance of single spins in GaN

Research on the Mn-implanted GaN with Ferromagnetism at Room Temperature

The Melilite-Type Compound(sr1-X,ax)

Room Temperature Ferromagnetism in Si-Doped GaN Powders

Quest for High-Curie Temperature MnxGe1−x Diluted Magnetic Semiconductors for Room-Temperature Spintronics Applications

Spin Splitting Tunable Optical Bandgap in GdN Thin Films for Spin Filtering

A Feasible Way to Find Above-Room-Temperature Ferromagnetic Spintronic Materials: from Flat Band Engineering