Properties of MOCVD-Grown GaN:Gd Films for Spintronic Devices

Melton Andrew G.,Liu ZhiQiang,Kucukgok Bahadir,Lu Na,Ferguson Ian

DOI: https://doi.org/10.1557/opl.2012.447

2012-01-01

Abstract:The mechanism leading to RT ferromagnetism in Gd-doped GaN is not agreed upon, despite many experimental and theoretical reports. Oxygen impurities have been proposed as a possible contributor to ferromagnetic behavior in GaN:Gd films. In this report, GaN:Gd thin films grown by MOCVD using two different metalorganic Gd precursors are examined. The two precursors are (TMHD) 3 Gd, which contains oxygen, and Cp 3 Gd, which does not. The films have been characterized by XRD, VSM, and EDS. EDS measurements indicate that the TMHD 3 Gd samples contain oxygen, while the Cp 3 Gd samples do not, and VSM scans show that the TMHD 3 Gd samples exhibit much higher magnetic moments than the Cp 3 Gd samples, supporting the theory that oxygen enhances the ferromagnetic behavior of GaN:Gd.