Study On Polysilicon Resistivity Control With Nano-Scale Grain Size

Xin Guo,Mengwei Li,Ling Li,Pengyu Liu,Chenxu Zhao,Zewen Liu
DOI: https://doi.org/10.1109/NANO.2013.6721040
2013-01-01
Abstract:Resistivity of boron-doped polycrystalline-silicon (polysilicon) film was investigated experimentally with wide range of doping concentration (5x10(18)similar to 1.4x10(20)cm(-3)) and various annealing conditions (950 similar to 1050 degrees C, 10-30mins), which results in sheet resistance of 89.5 similar to 149000 Omega/square and resistivity of 2.6x10-3 similar to 4.3 Omega.cm. Mathematical fitting curve shows perfect consistency of resistivity as function of average dopant concentration lower than 8.5x10(19)cm(-3). While at higher concentration where sheet resistance is lower than 170 Omega/square, it is verified that dependence of resistivity of annealing temperature can be represented by the average nano-scale grain size. The average diameter of heavily doped (1.4x10(20)cm(-3)) polysilicon is 85nm, 99nm and 111nm at 950 degrees C, 1000 degrees C, 1050 degrees C, respectively. Combining curve-fit and annealing temperature, resistivity of polysilicon thin film can be precisely controlled with an error less than 10%. The resistivity changes with nano-scale grain size are discussed.
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