Abstract:Precipitation of the impurity phase during the solidification of metallurgical grade silicon melt determines the distribution law and occurrence state of impurities in silicon, while also determining the removal efficiency of impurities during the leaching process. In this research, distribution and occurrence states of inclusions in silicon at different solidification rates were detected via an electron probe microanalyzer (EPMA). Results have shown that the size of the inclusions becomes larger following electric resistance remelting, and some new impurity phases are generated, such as the VSi2 phase, TiSi2 phase, Si-Fe-Al-Ni-Zr phase, and Si25FeAl2Ca16NiCu2 phase. It is seen that there are clear boundaries between different phases. In addition, based on agitation leaching of 4.0 mol·L-1 HCl and 2.0 mol·L-1 HF mixed acid, it was found that most of the impurities in industrial silicon were effectively removed during this process. The impurities in the industrial silicon decreased from 5233.0 ppmw to 181.7 ppmw. The precipitation of the Si-Fe-Al-Ni-Zr (Cu) phase was the main factor providing improved efficiency of impurity removal, which exposed the impurity elements to the greatest extent. Industrial silicon was subjected to resistance remelting at different solidification rates, and the removal effects of impurities were also different. The impurity removal effect was optimal at a solidification rate of 1 oC/min, as the impurities were reduced to 131.9 ppmw.

Effect of the Silicon Nitride Coating of Quartz Crucible on Impurity Distribution in Ingot‐Cast Multicrystalline Silicon

Optimization of Microstructure to Improve Si3n4 Ceramics with Thermal Conductivity and Mechanical Properties: Effect of Si and Α-Si3n4 Powder Composition

Investigation of Impurities Distribution on the mc-Si Ingot Grown by the Silicon Nitride Coated Carbon Crucible: Numerical Simulation

Numerical and experimental investigation on mc-Silicon growth process by varying the Si<sub>3</sub>N<sub>4</sub> coating thickness of crucible

Si 3 N 4 /fused quartz composite crucible with enhanced thermal conductivity for multicrystalline silicon ingot growth

Effect of Silicon Nitride Coated Carbon Crucible on Multi-Crystalline Silicon Ingot during Directional Solidification Process: Numerical Simulation

Control of the Gas Flow in an Industrial Directional Solidification Furnace for Production of High Purity Multicrystalline Silicon Ingots

Numerical and experimental investigation on iron contamination of 200 mm semiconductor-grade CZ-Si by bubble-free layer of quartz crucible

Non-metallic Particles in Solar Grade Silicon (Sog-Si)

Effects of solidification rate on the leaching behavior of metallic impurities in metallurgical grade silicon

Continuous Melting and Directional Solidification of Silicon Ingot with an Electromagnetic Cold Crucible

Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots

Removal of Metal Impurities in Metallurgical Grade Silicon by Cold Crucible Continuous Melting and Directional Solidification

Global Simulation of Coupled Oxygen and Carbon Transport in an Industrial Directional Solidification Furnace for Crystalline Silicon Ingots: Effect of Crucible Cover Coating

Sintered crucible coating for highly under-cooled Cu-Ni-Fe alloys

Effects of impurity barrier layer on the red zone at the bottom of cast monocrystalline Si ingot for solar cells

Iron Contamination in Cast Quasi-Single Crystalline Silicon Ingots

Releasing Material for the Growth of Shaped Silicon Crystals

Inhibiting crystallization of fused silica ceramic at high temperature with addition of α-Si3N4

Role of Longitudinal Temperature Gradients in Eliminating Interleaving Inclusions in Casting of Monocrystalline Silicon Ingots

Electrical Resistivity Distribution of Silicon Ingot Grown by Cold Crucible Continuous Melting and Directional Solidification