Abstract:For silicon solar cells, polysilicon‐based passivating contacts exhibit excellent gettering effects during high‐temperature fabrication process. This study confirms that both n‐ and p‐type polysilicon passivating contacts show stable and robust performance to iron gettering. However, iron gettering to the front p‐type emitter is found to degrade the emitter saturation current. The polysilicon‐based solar cells with significant initial bulk iron contamination exhibit lower Voc and Jsc values, interestingly, as well as an increased ideality factor and worse temperature coefficient in Voc. Over the past decade, silicon solar cells with carrier‐selective passivating contacts based on polysilicon capping an ultra‐thin silicon oxide (commonly known as TOPCon or POLO) have demonstrated promising efficiency potentials and are regarded as an evolutionary upgrade to the PERC (passivated emitter and rear contact) cells in manufacturing. The polysilicon‐based passivating contacts also exhibit excellent gettering effects that relax the wafer and cleanroom requirements to some extent. In this work, we experimentally explore the impact of bulk iron contamination and polysilicon gettering on the passivation quality of the polysilicon/oxide structure and the resulting solar cells performance. Results show that both n‐ and p‐type polysilicon/oxide passivating contacts are not affected by iron gettering, demonstrating robust and stable passivation quality. However, for a very high bulk iron contamination (1 × 1013 cm−3), the accumulated iron in the p‐type lightly boron‐doped emitter in crystalline silicon would degrade the emitter saturation current density. This can cause a reduction in both open‐circuit voltage and short‐circuit current. Meanwhile, this very high iron content (1 × 1013 cm−3) can further degrade the fill factor and temperature coefficient of the cells. On the other hand, for an initial iron content of 2 × 1012 cm−3, which should be well above the iron level in the current industrial Czochralski silicon wafers, the resulting cells demonstrate similar performance as the control group with no intentional iron contamination. This work brings attention to both the benefits of polysilicon gettering effects as well as the potential degradation due to the accumulation of metal impurities in the p‐type emitter region.

Iron Contamination in Cast Quasi-Single Crystalline Silicon Ingots

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Reusability of Contaminated Seed Crystal for Cast Quasi-Single Crystalline Silicon Ingots

Two-peak Characteristic Distribution of Iron Impurities at the Bottom of Cast Quasi-Single-crystalline Silicon Ingot

Collaborative R&D Between Multicrystalline Silicon Ingots and Battery Efficiency Improvement—effect of Shadow Area in Multicrystalline Silicon Ingots on Cell Efficiency

Effect of oxygen concentration on minority carrier lifetime at the bottom of quasi-single crystalline silicon

On the Low Carrier Lifetime Edge Zone in Multicrystalline Silicon Ingots

THE IMPACT OF IMPURITIES ON MINORITY CARRIER LIFETIME OF MULTICRYSTALLINE SILICON

Grain Boundary Engineering of High Performance Multicrystalline Silicon: Control of Iron Contamination at the Ingot Edge

Effects of metal impurities at the edges of cast Si ingot on crystal quality and solar cell performance

Migration Behavior of Impurity Iron in Silicon Melt Under Pulsed Electric Current

Preservation of Seed Crystals in Feedstock Melting for Cast Quasi-Single Crystalline Silicon Ingots

Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots

Iron Precipitation in Crystalline Silicon

Numerical and experimental investigation on iron contamination of 200 mm semiconductor-grade CZ-Si by bubble-free layer of quartz crucible

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Effect of Iron Contamination and Polysilicon Gettering on the Performance of Polysilicon‐Based Passivating Contact Solar Cells

The characterization of high quality multicrystalline silicon by the electron beam induced current method

(Invited) Defects in Cast-Mono Crystalline Silicon

Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si

Recombination Activity Of Sigma 3 Boundaries In Boron-Doped Multicrystalline Silicon: Influence Of Iron Contamination