Releasing Material for the Growth of Shaped Silicon Crystals

Y. Maeda,T. Yokoyama,I. Hide,T. Matsuyama,K. Sawaya
DOI: https://doi.org/10.1149/1.2108594
IF: 3.9
1986-02-01
Journal of The Electrochemical Society
Abstract:A mold coating material for a melt‐shaped crystal growth technique has been developed. After studying the contact angle and reaction between the molten silicon and other various high melting point materials, it was found that for shaped crystal growth with a lower impurity contamination level, a combination coating of Si3N4 and SiO2 is suitable for a mold coating material. A double layer coating was applied to the graphite mold base. The bottom layer in the mold, which had a 100–150 μm thickness, consisted of Si3N4 that had been formed by nitriding a spray‐coated Si powder. The 200 μm thick top layer consisted of a Si3N4‐SiO2 material. It had been produced by oxidizing a sprayed‐on coating consisting of Si3N4 powder mixed in a silanol liquid. Using the mold prepared with these coatings, a melt‐shaped crystal growth technique was carried out by the spinning‐casting process. Polycrystalline silicon sheets, with a 10×10 cm rectangular dimension and 0.5 mm thickness the size of a mold cavity, were obtained without adhesion to the mold. The sheet had an oxygen content of 1.7 ppm and a carbon content of 0.33 ppm. The mold was usable repeatedly up to 10 times.
electrochemistry,materials science, coatings & films
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