Abstract:Colloidal semiconductor quantum dots (QDs) are promising building blocks for the realization of future optoelectronic technologies, thanks to their size-tunable electronic and optical properties. Among various types of QDs, colloidal "giant" QDs (g-QDs, core/thick-shell) have been widely used in different applications, such as solar cells, light emitting devices, luminescent solar concentrators and photoelectrochemical (PEC) hydrogen production. However, g-QDs have a thick-shell which serves as a physical barrier for electron and hole transfer, leading to a slow charge transfer rate. In this work, we synthesized CdSe/CdSexS1-x/CdS core/shell/shell g-QDs with an intermediate CdSexS1-x alloyed layer. The presence of this interfacial layer largely improves the absorption of CdSe/CdS QDs, particularly in the 300-650 nm range. By engineering the interfacial layer, the holes can leak more into the CdS shell region compared to that of CdSe/CdS QDs. PEC devices based on alloyed g-QDs exhibit a 20% higher saturated photocurrent density (11 ± 0.5 mA cm-2) compared to CdSe/CdS QDs. In addition, after one-hour illumination (100 mW cm-2), the PEC cell based on alloyed g-QDs still exhibits a photocurrent density of 7.5 mA cm-2, maintaining 70% of its initial value. Such alloyed g-QDs are very promising for several emerging optoelectronic applications, where charge separation, transfer and transport play a critical role for the realization of high performance devices.

Fabrication and Photoluminescence of SiC Quantum Dots Stemming from 3C, 6H, and 4H Polytypes of Bulk SiC

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Optical properties of Ge/Si quantum dot superlattices

Luminescent Silicon Carbide Nanocrystallites in 3C-Sic∕polystyrene Films

Luminescence from Colloidal 3C-Sic Nanocrystals in Different Solvents

Self-organized Growth and Optical Emission of Silicon-Based Nanoscale Β-Sic Quantum Dots

Self-assembled Quantum Dots–polyhedral Oligomeric Silsesquioxane Nanohybrids with Enhanced Photoluminescence

In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Quantum confinement effect in 6H-SiC quantum dots observed via plasmon–exciton coupling-induced defect-luminescence quenching

Size-Dependent Electroluminescence From Si Quantum Dots Embedded In Amorphous Sic Matrix

Luminescent Small-Diameter 3C-Sic Nanocrystals Fabricated Via A Simple Chemical Etching Method

Experimental Evidence for the Quantum Confinement Effect in 3C-Sic Nanocrystallites.

Experimental Study of the Influence of CH and H on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition.

Colloidal 2D Layered SiC Quantum Dots from a Liquid Precursor: Surface Passivation, Bright Photoluminescence, and Planar Self-Assembly

Tailoring the Interfacial Structure of Colloidal "giant" Quantum Dots for Optoelectronic Applications.

One-step fabrication of photoluminescent SiC quantum dots through a radiation technique

Fabrication and Luminescence Properties of Si Quantum Dots Based on Si-Rich Sinx/N-Rich Siny Multilayer

Structural and Electroluminescent Properties of Si Quantum Dots/sic Multilayers

Optical Property Characterization of Silicon Quantum Wires

A first-principles study of the electronic, vibrational, and optical properties of planar SiC quantum dots