One-step fabrication of photoluminescent SiC quantum dots through a radiation technique

Wei Qi,Mengjie Li,Long Zhao

DOI: https://doi.org/10.1039/d0nj03019h

IF: 3.3

2020-01-01

New Journal of Chemistry

Abstract:The fabrication of PL SiC-QDs by using ionic liquid-based microemulsions combined with electron beam radiation.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Enhancing Quantum Dots for Bioimaging using Advanced Surface Chemistry and Advanced Optical Microscopy: Application to Silicon Quantum Dots (SiQDs)

xiaoyu cheng,elizabeth hinde,dylan m owen,stuart b lowe,peter j reece,katharina gaus,j justin gooding

DOI: https://doi.org/10.1002/adma.201503223

IF: 29.4

2015-01-01

Advanced Materials

Abstract:Fluorescence lifetime imaging microscopy is successfully demonstrated in both one-and two-photon cases with surface modified, nanocrystalline silicon quantum dots in the context of bioimaging. The technique is further demonstrated in combination with Forster resonance energy transfer studies where the color of the nanoparticles is tuned by using organic dye acceptors directly conjugated onto the nanoparticle surface.
Versatile "click chemistry" approach to functionalizing silicon quantum dots: applications toward fluorescent cellular imaging.

Simone Ciampi

DOI: https://doi.org/10.1021/la500945f

IF: 3.9

2014-01-01

Langmuir

Abstract:In this study, we describe a solution procedure for the preparation and surface modification of photostable colloidal silicon quantum dots (SiQDs) for imaging of cancer cells. Photoluminescent SiQDs were synthesized by reduction of halogenated silane precursors using a microemulsion process. It was shown that 1,8-nonadiyne molecules could be grafted onto the surface of hydrogen-terminated SiQDs via ultraviolet (UV)-promoted hydrosilylation, demonstrated by Fourier transform infrared spectroscopy (FTIR) measurements. In addition, various azide molecules were coupled onto nonadlyne-functionalized particles, rendering particles dispersible in selected polar and nonpolar solvents. The photoluminescence of functionalized SiQDs was stable against photobleaching and did not vary appreciably within biologically applicable pH and temperature ranges. To demonstrate compatibility with biological systems, water-soluble SiQDs were used for fluorescent imaging of HeLa cells. In addition, the SiQDs were shown to be non-cytotoxic at concentrations up to 240 mu g/mL. The results presented herein provide good evidence for the versatility of functionalized SiQDs for fluorescent bioimaging application.
Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Dawei Di,Ivan Perez-Wurfl,Gavin Conibeer,Martin A. Green

DOI: https://doi.org/10.1117/12.859715

2010-01-01

Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.
In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Linghai Meng,Shukun Li,Huanqing Chen,Menglai Lei,Guo Yu,Peijun Wen,Jianbo Fu,Shengxiang Jiang,Hua Zong,Dong Li,Xiaodong Hu

DOI: https://doi.org/10.1016/j.jlumin.2023.119913

IF: 3.6

2023-05-17

Journal of Luminescence

Abstract:Herein, we report that high-quality SiN:H films embedded with Si QDs were in-situ fabricated and prepared by the reactive facing target sputtering, which relies on tuning N 2 and Ar mixture gas flow ratio. The size of Si QDs in SiN:H films can be tuned from 3.87 nm to 1.40 nm, which exhibit color-tunable photoluminescence from red to blue in the visible region. The microstructure evolution and optical properties of SiN:H films embedded with Si QDs were analyzed by FTIR, Raman, PL, and TRPL measurements, respectively. Considering their unique emission properties, SiN:H films embedded with Si QDs were especially utilized as the emitting layer for fabricating high-performance EL SiN-based LEDs. The broad EL emission properties of the devices were explored by both experimental observations and a theoretical model. This work offers a novel idea to prepare high-quality SiN:H films embedded with Si QDs and a deep understanding of their optoelectronic properties.

optics
Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Guohua Shi,Gang Xu,Gaorong Han

DOI: https://doi.org/10.1016/j.matlet.2006.04.080

IF: 3

2007-01-01

Materials Letters

Abstract:Nanocrystalline Si-rich silicon oxide films were deposited using plasma enhanced chemical vapor deposition technique with the mixture of silane (SiH4), nitrous oxide (N2O) and hydrogen (H-2) as gas source on quartz glass substrate at the substrate temperature of 300 degrees C. The effect of the ratio N2O/SiH4 on the oxidation, microstructures and photoluminescence (PL) of the as-deposited Si-rich silicon oxide films was investigated with FTIR, XRD and HRTEM. The results reveal that with the increasing ratio of N2O/SiH4, more amounts of oxygen are incorporated in the as-deposited films and more nanosized silicon particles are embedded in the films, forming nanocrystalline Si-rich silicon oxide films. The quantum confinement effect or the cooperation of quantum confinement and luminescence center results in the nanocrystalline Si-rich silicon oxide films of higher PL intensity. (c) 2006 Elsevier B.V. All rights reserved.
Fabrication and Luminescence Properties of Si Quantum Dots Based on Si-Rich Sinx/N-Rich Siny Multilayer

Huang Rui,Wang Dan-Qing,Song Jie,Ding Hong-Lin,Wang Xiang,Guo Yan-Qing,Chen Kun-Ji,Xu Jun,Li Wei,Ma Zhong-Yuan

DOI: https://doi.org/10.7498/aps.59.5823

IF: 0.906

2010-01-01

Acta Physica Sinica

Abstract:SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently thermal annealing and laser irradiation with the aim of fabrication three-dimensional constrained, size-controlled and well-regulated Si nanocrystals. The experimental results show that Si nanocrystals grow in the Si-rich SiN sublayer. Furthermore, the grain size can be controlled according to the thick of Si-rich SiN. It is also found that the crystalline fraction of the multilayers irradiated by laser is significantly higher than that by thermal annealing. The devices that employing the laser-irradiated multilayer as luminescent active layer exhibit an enhanced visible electroluminescence and the external quantum efficiency is improved by 40% in comparison with the device without annealing.
Luminescent, water-soluble silicon quantum dots via micro-plasma surface treatment

Vighneswara Siva Santosh Kumar Kondeti,Jeslin J. Wu,U. Kortshagen,P. Bruggeman

DOI: https://doi.org/10.1088/0022-3727/49/8/08LT02

2016-01-27

Abstract:Silicon quantum dots (SiQDs), with their broad absorption, narrow and size-tunable emission, and potential biocompatibility are highly attractive materials in biological imaging applications. The inherent hydrophobicity and instability of hydrogen-terminated SiQDs are obstacles to their widespread implementation. In this work, we successfully produced highly luminescent, hydrophilic SiQDs with long-term stability in water using non-thermal plasma techniques. Hydrogen-terminated SiQDs were produced in a low-pressure plasma and subsequently treated in water using an atmospheric-pressure plasma jet for surface modification. Preliminary assessments of the chemical mechanism(s) involved in the creation of water-soluble SiQDs were performed using Fenton’s reaction and various plasma chemistries, suggesting both OH and O species play a key role in the oxidation of the SiQDs.

Materials Science,Physics
Emission cells with quantum dots on silicon chip prepared by using fs pulsed laser

Wei-Qi Huang,Yin-lian Li,Zhong-Mei Huang,Hao-Ze Wang,Xi Zhang,Qi-Bin Liu,Shi-Rong Liu

DOI: https://doi.org/10.1016/j.sse.2024.109009

IF: 1.916

2024-10-05

Solid-State Electronics

Abstract:Emission efficiency of bulk-silicon is very low due to its indirect-gap of energy band. However, it is interesting that the enhanced emission has been observed in the micro-cavities array fabricated by using femtosecond (fs) pulsed laser, in which the stimulated emission characteristics occur after annealing for suitable time in the photo-luminescence (PL) measurement at room temperature. The results of experiment and calculation demonstrated that the enhanced emission may be originated from the Si quantum dots embedded in the micro-cavities prepared by fs pulsed laser. Here, the direct-gap of energy band appears after annealing due to the Heisenberg principle related to ⊿k–1/⊿x in quantum system of nanostructures. The PL intensity obviously increases on the Si quantum dots growing with annealing for better crystallization, in which the external quantum efficiency is higher than 40 % near 760 nm. A new kind of emission source of the micro-cavities array in visible wavelength has been built on silicon wafer, in which the Si quantum dots play a main role for enhancement of emission. It should have a good application in optical integrated chip based on silicon, such as emission cells built on Si chip.

physics, condensed matter, applied,engineering, electrical & electronic
Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Tomohisa Mizuno,Koki Murakawa,Toshiyuki Sameshima

DOI: https://doi.org/10.1063/5.0143637

IF: 2.877

2023-04-15

Journal of Applied Physics

Abstract:In this study, we developed very simple and ULSI (ultra large scale integration) compatible fabrication processes for group-IV (Si 1 –x Ge x and Si) semiconductor quantum dots (QDs) to apply hybrid ULSIs with photonic and electron devices, using double Ge + /Si + hot-ion implantation into a SiO 2 layer with larger bandgap E G and the post-furnace annealing. We successfully demonstrated the near-infrared (IR) photoluminescence (PL) from Si 1 –x Ge x -QDs. Transmission electron microscopy observations of single-crystallized Si 1 –x Ge x -QDs revealed that the diameter and the QD density were 3.6 ± 0.9 nm and (2.6 ± 0.4) × 10 12 cm −2 , respectively. In addition, Ge atoms were detected in the Si 1 –x Ge x -QDs by the energy dispersive x-ray spectroscopy analysis, and the Ge fraction of Si 1– x Ge x -QDs was varied from 0.06 to 0.26 by changing the Ge ion dose. The increase in the PL intensity by forming gas annealing was attributed to the dangling-bond reduction by the H-atom termination method. The PL spectrum of Si 1 –x Ge x -QDs was fitted by PL components of two QD structures containing Si 1 –x Ge x and Si materials. The PL intensity and PL-peak photon energy of Si 1 –x Ge x -QDs strongly depended on the Ge fraction. The Si 1 –x Ge x -QDs achieved the maximum PL intensity at x ≈ 0.13. High PL-peak photon energy (∼1.31 eV) of Si 1 –x Ge x -QDs is attributed to the quantum confinement effect of carriers in QDs. Consequently, group-IV semiconductor QDs including Si 1 –x Ge x , Si, SiC, and C, through the simple hot-ion implantation into the SiO 2 layer, exhibited a wide range of PL emissions from the near-IR to ultraviolet regions.

physics, applied
Preparation of Quantum Dot Light-emitting Diodes Based on the Quantum Dots-CBP Hybrid

HU Lian,WU Hui-zhen

DOI: https://doi.org/10.3788/fgxb20153610.1106

2015-01-01

Abstract:High quality CdSe@ZnS and CdZnS/ZnS quantum dots ( QDs) with core/shell structures were synthesized by the one pot method. The two types of QDs were mixed with the hole transport material CBP, respectively. The CBP:QDs hybrids were spin coated as the active layers. The green and blue emitting QD light-emitting diodes ( LED) can be prepared with simple spin coating opera-tion. This method reduces the steps of spin coating because the hybrid of CBP and QDs is spin coa-ted together, thus the QD-LED can be produced easily. For the QD-LED with two spin coating steps, the energy level of cathode is far from that of CBP:QD layer, which results the high turn-on voltage. Surface states of QDs in CBP may capture the injected carriers to form the surface state emission. The surface state emission related to the carrier density.
High rate fabrication of room temperature red photoluminescent SiC nanocrystals

tengfei cao,haibao zhang,binhang yan,yi cheng

DOI: https://doi.org/10.1039/C5TC00628G

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:A high rate fabrication of a thin film complex consisting of cubic-SiC nanocrystals, amorphous silicon and graphite was realized using an atmospheric pressure thermal plasma enhanced chemical vapor deposition (APTPECVD) process with SiCl4 and C2H2 as the silicon source and carbon source, respectively. The morphology, crystal structure and surface chemical composition of the products were characterized. The APTPECVD SiC nanocrystals have average diameters between 18 and 30 nm. A room temperature red region photoluminescence (PL) property originated from the quantum confinement effect of these SiC nanocrystals was observed under UV wavelength excitation. Moreover, pure SiC nanocrystals with a red region PL property can be obtained after a simple post-treatment, including calcining and etching processes. These red photoluminescent SiC nanocrystals can be utilized as biomarkers in bioimaging and drug delivery.
Efficient One-Pot Synthesis of Highly Photoluminescent Alkyl-Functionalised Silicon Nanocrystals.

Jing Wang,Shuqing Sun,Fei Peng,Lixin Cao,Lianfeng Sun

DOI: https://doi.org/10.1039/c1cc10573f

IF: 4.9

2011-01-01

Chemical Communications

Abstract:The chemical reduction of micelles formed by mixing silicon tetrachloride and hexyltrichlorosilane in apolar solvent, where hexyltrichlorosilane serves as both reactant and surfactant, yields brightly luminescent silicon nanocrystals, and enables efficient synthesis of alkyl-functionalised silicon quantum dots (SiQDs) in a single step.
Luminescence Mechanism of Ligand-induced Interface States in Silicon Quantum Dots

Jian Zhou,Fengyang Ma,Kai Chen,Wuyan Zhao,Riyi Yang,Chong Qiao,Hong Shen,Wan-Sheng Su,Ming Lu,Yuxiang Zheng,Rongjun Zhang,Liangyao Chen,Songyou Wang

DOI: https://doi.org/10.1039/d3na00251a

IF: 5.598

2023-06-21

Nanoscale Advances

Abstract:Over decades of research on photoluminescence (PL) of silicon quantum dots (Si-QDs), extensive exploratory experiments have been conducted to find ways to improve the photoluminescence quantum yield (PLQY). However, the complete physical picture of Si-QDs luminescence is not yet clear and needs to be studied in depth. In this work, considering the quantum size effect and surface effect, the optical properties of Si-QDs with different sizes and surface terminated ligands are calculated based on first principles. The results show that there are significant differences in the emission wavelength and emission intensity of Si-QDs interface states connected by different ligands, among which the emission of silicon-oxygen double bonds is the strongest. When the size increases, the influence of the surface effect weakens, and only the silicon-oxygen double bonds still localize the charge near the ligand, maintaining high-intensity luminescence. In addition, the presence of surface dangling bonds also affects luminescence. Our findings deepen the understanding of the photoluminescence mechanism of Si-QDs, and provide a direction for future improvement of the photoluminescence quantum efficiency of silicon nanocrystals and for fabricating silicon-based photonic devices.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Highly Fluorescent Quantum Dot@silica Nanoparticles by a Novel Post-Treatment for Live Cell Imaging

Xiebing Wang,Wanwan Li,Bingxia Zhao,Delong Zhang,Kang Sun,Xiao An,Zhaofeng Zhang,Zunli Shen

DOI: https://doi.org/10.1039/c3ra22782k

IF: 4.036

2013-01-01

RSC Advances

Abstract:Highly fluorescent CdSe/CdS/ZnS core/shell/shell QD@SiO2 NPs have been synthesized via a reverse microemulsion approach with a novel post-treatment process by combining annealing with photoactivation. The QD@SiO2 NPs have a high photoluminescent quantum yield of up to 56% and were successfully applied to cellular uptake by HeLa cells.
Preparation and Luminescent Properties of SiC Nanoparticles by Strong Pulse Discharge in Organic Liquid Phase Environment

Kai Du,Ronghui Wei,Gaojie Li

DOI: https://doi.org/10.1088/2053-1591/ad3525

IF: 2.025

2024-03-20

Materials Research Express

Abstract:SiC nanoparticles with relatively uniform particle distribution were successfully prepared using a continuous strong pulse discharge method using hexamethyldisilane as the organic liquid phase environment. The samples were subjected to X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Raman spectroscopy (Raman) tests. XRD and Raman data indicate that the particle composition is mainly composed of β SiC. The electron microscope image illustrates particle-sizes ranging from 5-20 nm and existing in an agglomerated state. Further photoluminescence (PL) results indicate that the annealing temperature under vacuum conditions has a significant positive effect on the luminescence intensity.

materials science, multidisciplinary
Facile Fabrication of Dendritic Mesoporous SiO2@CdTe@SiO2 Fluorescent Nanoparticles for Bioimaging

Shaohua Zhang,Ling Wen,Jianping Yang,Jianfeng Zeng,Qiao Sun,Zhen Li,Dongyuan Zhao,Shixue Dou

DOI: https://doi.org/10.1002/ppsc.201500254

IF: 3.467

2016-01-01

Particle & Particle Systems Characterization

Abstract:A seeded watermelon‐like mesoporous nanostructure (mSiO2@CdTe@SiO2, mSQS) composed of a novel dendritic mesoporous silica core, fluorescent CdTe quantum dots (QDs), and a protective solid silica shell is successfully fabricated by loading QDs into dendritic mesoporous silica nanoparticles through electrostatic interaction, and then coating with a solid silica shell by the modified Stöber method. The shell thickness of mSQS can be tuned from 0 to 32 nm as desired by controlling the reaction parameters, including the amount of silica precursor, tetraethyl orthosilicate, that is introduced, the solvent ratio (H2O:ethanol), and the amount of catalyst (NH3⋅H2O). These fluorescent mSiO2@QDs@SiO2 nanoparticles possess excellent stability and thickness‐dependent cytotoxicity, and are successfully applied to bioimaging.
Self-assembled Quantum Dots–polyhedral Oligomeric Silsesquioxane Nanohybrids with Enhanced Photoluminescence

Qi Li,Lijie Dong,Xiang Wang,Jing Huang,Haian Xie,Chuanxi Xiong

DOI: https://doi.org/10.1016/j.scriptamat.2012.01.047

IF: 6.302

2012-01-01

Scripta Materialia

Abstract:We propose and demonstrate a novel family of polyhedral oligomeric silsesquioxane-modified quantum dots (QDs) with remarkably enhanced photoluminescence, which breaks the convention that the optical properties of semiconductor nanocrystals often decrease after surface modification. The result suggests that molecules with cubic nanostructure can enhance the fluorescence intensity of QDs, and the resultant hybrid material could be a very promising candidate for various applications, including optoelectronic devices and biological fluorescence labeling and imaging. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
A Luminescent Si Quantum Dots Films - Preparation And Characterization

Kj Chen,Xf Huang,Mr Chen,Wh Shi,Zf Li,D Feng

DOI: https://doi.org/10.1117/12.190736

1994-01-01

Abstract:We report two kinds of method for preparing luminescent silicon films with quantum crystallites (QCs) structures: (1) Using laser annealing technique to crystallize ultrathin amorphous silicon layers which were constructed in a-Si:H/a-SiNx:H multiquantum well (MQW) structures. (2) Applying the layer-by-layer deposition technique to the growth of silicon QCs by varying the hydrogen plasma exposure time. The novel structures of these two types of QCs films were characterized by X-ray diffraction and Raman scattering spectroscopy. The room temperature visible photoluminescence (PL) from Si QCs with size of 4 nm or less has been observed in most of samples.
Luminescent Small-Diameter 3C-Sic Nanocrystals Fabricated Via A Simple Chemical Etching Method

J. Zhu,Z. Liu,X. L. Wu,L. L. Xu,W. C. Zhang,Paul K. Chu

DOI: https://doi.org/10.1088/0957-4484/18/36/365603

IF: 3.5

2007-01-01

Nanotechnology

Abstract:Up to now, it is still a great challenge to obtain bulk quantities of luminescent 3C-SiC nanocrystals with sizes smaller than 10 nm, which have quantum confinement effect. We report in this paper on the fabrication of 3C-SiC nanocrystals via a chemical etching of microscale 3C-SiC grains and ultrasonic vibration. The sizes of the as-prepared 3C-SiC nanocrystals are smaller than 6.5 nm and have a centric distribution with the maximal probability of 3.6 nm. Due to the quantum confinement effect, the suspension of the 3C-SiC nanocrystals exhibits a tunable photoluminescence (PL), which is visible with the naked eye. As the excitation line increases from 260 to 480 nm, the PL peak position changes from 420 to 512 nm. Spectral analysis and microstructural observations show that the chemical etching leads to the formation of a weakly interconnected nanostructure network in the large 3C-SiC grains and subsequent ultrasonic vibration crumbles the interconnected network, forming small-size 3C-SiC nanocrystals.
The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Jian Zhou,Fengyang Ma,Kai Chen,Wuyan Zhao,Riyi Yang,Chong Qiao,Hong Shen,Wan-Sheng Su,Ming Lu,Yuxiang Zheng,Rongjun Zhang,Liangyao Chen,Songyou Wang

DOI: https://doi.org/10.1039/d3na00251a

IF: 5.598

2023-01-01

Nanoscale Advances

Abstract:Over decades of research on photoluminescence (PL) of silicon quantum dots (Si-QDs), extensive exploratory experiments have been conducted to find ways to improve the photoluminescence quantum yield. However, the complete physical picture of Si-QD luminescence is not yet clear and needs to be studied in depth. In this work, which considers the quantum size effect and surface effect, the optical properties of Si-QDs with different sizes and surface terminated ligands were calculated based on first principles calculations. The results show that there are significant differences in the emission wavelength and emission intensity of Si-QD interface states connected by different ligands, among which the emission of silicon-oxygen double bonds is the strongest. When the size of the Si-QD increases, the influence of the surface effect weakens, and only the silicon-oxygen double bonds still localize the charge near the ligand, maintaining a high-intensity luminescence. In addition, the presence of surface dangling bonds also affects luminescence. This study deepens the understanding of the photoluminescence mechanism of Si-QDs, and provides a direction for both future improvement of the photoluminescence quantum efficiency of silicon nanocrystals and for fabricating silicon-based photonic devices.

One-step fabrication of photoluminescent SiC quantum dots through a radiation technique

Enhancing Quantum Dots for Bioimaging using Advanced Surface Chemistry and Advanced Optical Microscopy: Application to Silicon Quantum Dots (SiQDs)

Versatile &quot;click chemistry&quot; approach to functionalizing silicon quantum dots: applications toward fluorescent cellular imaging.

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Fabrication and Luminescence Properties of Si Quantum Dots Based on Si-Rich Sinx/N-Rich Siny Multilayer

Luminescent, water-soluble silicon quantum dots via micro-plasma surface treatment

Emission cells with quantum dots on silicon chip prepared by using fs pulsed laser

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Preparation of Quantum Dot Light-emitting Diodes Based on the Quantum Dots-CBP Hybrid

High rate fabrication of room temperature red photoluminescent SiC nanocrystals

Efficient One-Pot Synthesis of Highly Photoluminescent Alkyl-Functionalised Silicon Nanocrystals.

Luminescence Mechanism of Ligand-induced Interface States in Silicon Quantum Dots

Highly Fluorescent Quantum Dot@silica Nanoparticles by a Novel Post-Treatment for Live Cell Imaging

Preparation and Luminescent Properties of SiC Nanoparticles by Strong Pulse Discharge in Organic Liquid Phase Environment

Facile Fabrication of Dendritic Mesoporous SiO2@CdTe@SiO2 Fluorescent Nanoparticles for Bioimaging

Self-assembled Quantum Dots–polyhedral Oligomeric Silsesquioxane Nanohybrids with Enhanced Photoluminescence

A Luminescent Si Quantum Dots Films - Preparation And Characterization

Luminescent Small-Diameter 3C-Sic Nanocrystals Fabricated Via A Simple Chemical Etching Method

The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Versatile "click chemistry" approach to functionalizing silicon quantum dots: applications toward fluorescent cellular imaging.