Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.

Experimental Evidence for the Quantum Confinement Effect in 3C-Sic Nanocrystallites.

Luminescent Silicon Carbide Nanocrystallites in 3C-Sic∕polystyrene Films

Luminescent Small-Diameter 3C-Sic Nanocrystals Fabricated Via A Simple Chemical Etching Method

Luminescence from Colloidal 3C-Sic Nanocrystals in Different Solvents

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Stability of luminescent 3C-SiC nanocrystallites in aqueous solution

Deposition Of Nanocrystalline Cubic Silicon Carbide Films Using The Hot-Filament Chemical-Vapor-Deposition Method

Direct Evidence of Quantum Confinement from the Size Dependence of the Photoluminescence of Silicon Quantum Wires

Identification of Surface Structures on 3C-Sic Nanocrystals with Hydrogen and Hydroxyl Bonding by Photoluminescence

Time-Resolved Photoluminescence Spectra Of Strong Visible Light-Emitting Sic Nanocrystalline Films On Si Deposited By Electron-Cyclotron-Resonance Chemical-Vapor Deposition

Quantum confinement effect and field emission characteristics of ultrathin 3C–SiC nanobelts

Synthesis and investigation of the physicochemical properties of polymorphic 3C–SiC

Theory on the Quantum Confinement Luminescence Center Model for Nanocrystalline and Porous Si

Low-Dimensional Sic Nanostructures: Fabrication, Luminescence, and Electrical Properties

Light-Emitting Two-Dimensional Ultrathin Silicon Carbide

Uv-Blue Photoluminescence from Close-Packed Sic Nanocrystal Film

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Fabrication and photoluminescence of bicrystalline SiC nanobelts

Interaction Between Water Molecules and 3C-Sic Nanocrystal Surface

Controlling the Energy-Level Alignment of Silicon Carbide Nanocrystals by Combining Surface Chemistry with Quantum Confinement

Experimental Study of the Influence of CH and H on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition.