Quantum confinement effect and field emission characteristics of ultrathin 3C–SiC nanobelts

Guodong Wei,Weiping Qin,Ryongjin Kim,Jingbo Sun,Peifen Zhu,Guofeng Wang,Lili Wang,Daisheng Zhang,Kezhi Zheng

DOI: https://doi.org/10.1016/j.cplett.2008.07.022

IF: 2.719

2008-01-01

Chemical Physics Letters

Abstract:Photoluminescence spectrum and field-emitting characteristics of ultrathin 3C–SiC nanobelts.

What problem does this paper attempt to address?

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Dawei Di,Ivan Perez-Wurfl,Lingfeng Wu,Yidan Huang,Alessandro Marconi,Andrea Tengattini,Aleksei Anopchenko,Lorenzo Pavesi,Gavin Conibeer

DOI: https://doi.org/10.1063/1.3671671

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Silicon nanocrystals have shown attractive properties for photonic and photovoltaic applications. We demonstrate all-Si light-emitting diodes based on boron-doped Si nanocrystal/c-Si p-n heterojunction structure, which show electroluminescence in the visible/infrared regions. The electroluminescence spectra of these diodes can be modified by changing the quantum confining barriers from SiO2 to Si3N4. Our results are an important demonstration of electroluminescence from boron-doped Si nanocrystals—a wide band gap absorber material for third generation photovoltaics.
Experimental Evidence for the Quantum Confinement Effect in 3C-Sic Nanocrystallites.

XL Wu,JY Fan,T Qiu,X Yang,GG Siu,PK Chu

DOI: https://doi.org/10.1103/physrevlett.94.026102

IF: 8.6

2005-01-01

Physical Review Letters

Abstract:Using electrochemical etching of a polycrystalline 3C-SiC target and subsequent ultrasonic treatment in water solution, we have fabricated suspensions of 3C-SiC nanocrystallites that luminesce. Transmission electron microscope observations show that the 3C-SiC nanocrystallites, which uniformly disperse in water, have sizes in the range of 1-6 nm. Photoluminescence and photoluminescence excitation spectral examinations show clear evidence for the quantum confinement of 3C-SiC nanocrystallites with the emission band maximum ranging from 440 to 560 nm. Tunable, composite polystyrene/SiC film can be made by adding polystyrene to a toluene suspension of the 3C-SiC nanocrystallites and then coating the resulting solution onto a Si wafer.
Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

Jianhong Liu,Yang,Kai Song,Weijun Li,Hulin Wang,Nadiya Vityuk,Nataliia Klymenko,Tetyana V. Krupska,Vladimir V. Turov,Xinsheng Zhao,Weiyou Yang,Shanliang Chen,Xiaoxiao Li

DOI: https://doi.org/10.1039/d3tc02903d

IF: 6.4

2023-01-01

Journal of Materials Chemistry C

Abstract:High-performance single-crystal integrated three-dimensional nanowire field emitters with high-density SiC dendrites surrounding SiC backbone nanowires were explored.
A Study on the Field Emission Characteristics of A Wide Band-Gap Thin Film

DC Li,CZ Li,CC Zhu,YT Yang,ZY Zhu,YJ Li,JKO Sin

DOI: https://doi.org/10.1109/ivmc.1997.627564

1997-01-01

Abstract:In order to discover the effect of the SiC layer on the electron emission, the emitter with SiC layer is simplified as a Rectangular Double-Barrier (RDB) in one dimension. The Time-Independent SchrOdinger Equation is solved for the energy band structure by the Numerov algorithm under the boundary continuous condition, then a tunneling matrix is gained through Simpson quadrature. The result of the numerical simulations indicates a resonant property of the emission current, and there presents a high electron emission efficiency at the resonant state. Furthermore the resonance depends merely on the potential profile and its deformation by the applied field. Consequencially this advantage may be taken in the emitter fabrication.
Large-scale synthesis, growth mechanism, and photoluminescence of 3C-SiC nanobelts

Hejun Li,Zibo He,Yanhui Chu,Lehua Qi,Qiangang Fu

DOI: https://doi.org/10.1016/j.matlet.2013.07.092

IF: 3

2013-01-01

Materials Letters

Abstract:SiC nanobelts were synthesized in large-scale by a simple and economical technique of chemical vapor deposition. The synthesized nanobelts were well crystallized 3C-SiC with a growth direction of [111]. Their widths are in the range of 0.5–3µm, the thicknesses ranging from 50 to 200nm, and the lengths are up to several hundreds of micrometers. The nanobelt growth may be governed by a ferrocene-assisted vapor-solid mechanism. The synthesized nanobelts exhibit three strong broad photoluminescence peaks at 401nm, 452nm, and 467nm due to their belt-like shape, quantum size-confinement, and internal structure defects, which may have great potential applications such as light emitting diodes and display devices.
Quantum confinement effect in 6H-SiC quantum dots observed via plasmon–exciton coupling-induced defect-luminescence quenching

Xiaoxiao Guo,Yumeng Zhang,Baolu Fan,Jiyang Fan

DOI: https://doi.org/10.1063/1.4978903

IF: 4

2017-03-20

Applied Physics Letters

Abstract:The quantum confinement effect is one of the crucial physical effects that discriminate a quantum material from its bulk material. It remains a mystery why the 6H-SiC quantum dots (QDs) do not exhibit an obvious quantum confinement effect. We study the photoluminescence of the coupled colloidal system of SiC QDs and Ag nanoparticles. The experimental result in conjunction with the theoretical calculation reveals that there is strong coupling between the localized electron-hole pair in the SiC QD and the localized surface plasmon in the Ag nanoparticle. It results in resonance energy transfer between them and resultant quenching of the blue surface-defect luminescence of the SiC QDs, leading to uncovering of a hidden near-UV emission band. This study shows that this emission band originates from the interband transition of the 6H-SiC QDs and it exhibits a remarkable quantum confinement effect.

physics, applied
Luminescent Silicon Carbide Nanocrystallites in 3C-Sic∕polystyrene Films

JY Fan,XL Wu,R Kong,T Qiu,GS Huang

DOI: https://doi.org/10.1063/1.1914962

IF: 4

2005-01-01

Applied Physics Letters

Abstract:We report optical emission of SiC nanocrystallite films, which clearly shows the quantum confinement effect. Bulk polycrystalline 3C-SiC was first electrochemically etched and then the fabricated porous silicon carbide was ultrasonically treated in water or toluene suspension to disperse into colloidal nanoparticles. Transmission electron microscopy images clearly show that the colloidal nanoparticles have 3C-SiC lattice structure with sizes varying from about 6nm down to below 1nm. The suspension of 3C-SiC nanocrystallites exhibits ultrabright emission with wavelengths ranging from 400to520nm when the excitation wavelength varies from 250to480nm, in accordance with the quantum confinement effect. By adding polystyrene to the toluene suspension containing SiC nanoparticles and coating the mixing solution onto a Si wafer, we obtain the SiC∕polystyrene films that luminesce.
Fabrication and field-emission performance of zirconium disulfide nanobelt arrays.

Yu-Ling Zhang,Xing-Cai Wu,You-Rong Tao,Chang-Jie Mao,Jun-Jie Zhu

DOI: https://doi.org/10.1039/b804528c

IF: 4.9

2008-01-01

Chemical Communications

Abstract:Crystal ZrS2 nanobelt quasi-arrays were fabricated by pyrolysis of the ZrS3 nanobelt quasi-arrays in vacuum;field-emission measurements show that the ZrS2 nanobelt arrays are decent field emitters with a turn-on field of similar to 0.95 V mu m(-1) and a threshold field of 3.6 V mu m(-1).
Ultraviolet Photoluminescence from 3C-Sic Nanorods

Ligong Zhang,Weiyou Yang,Hua Jin,Zhuhong Zheng,Zhipeng Xie,Hezhuo Miao,Linan An

DOI: https://doi.org/10.1063/1.2358313

IF: 4

2006-01-01

Applied Physics Letters

Abstract:An intensive sharp photoluminescence at 3.3eV is observed from single-crystal 3C-SiC nanorods. Structural characterization reveals that the nanorods contain a fairly large amount of threefold stacking faults. We tentatively attribute the emission to these stalking faults, which structurally resemble 6H-SiC nano-layers of 1.5nm embedded in a 3C-SiC matrix. The emission mechanism is discussed in terms of spontaneous polarization at the stacking faults.
Quantum Confinement Effect on Li-Segregation in Si Nanowires

Cheng‐Di Dong,Xingao Gong,Ruqian Wu

2010-01-01

Abstract:Submitted for the MAR10 Meeting of The American Physical Society Quantum confinement effect on Li-Segregation in Si nanowires CHUAN-DING DONG, XIN-GAO GONG, RU-QIAN WU, DEPARTMENT OF PHYSICS, FUDAN UNIVERSITY, SHANGHAI 200433, CHINA COLLABORATION, DEPARTMENT OF PHYSICS AND ASTRONOMY, UNIVERSITY OF CALIFORNIA, IRVINE COLLABORATION — Silicon nanowires (SiNWs) have attracted extensive research attention due to their excellent properties that are promising for various applications. The incorporation of impurity atoms and change of size play a crucial role in the control of their electronic properties. Using density functional calculations, we studied the segregation behavior of Li atom in SiNWs with different sizes. It is striking that the doping and segregation energetics also strongly depend on the size of SiNWs. Doping Li into the nanowire with a diameter less than 1.3 nm is energetically unfavorable. In contrast, Li prefers to take the center sites in large SiNWs. The phenomenal size dependence can be understood through the quantum confinement effect toward the electronic states introduced by the Li atom. The reduced size also leads to strong quantum confinement for states at the conduction band minimum and increases their energies. We will discuss other properties of Li in SiNWs, which are important for applications such as using SiNWs as electrode materials in Li-batteries.
Direct Evidence of Quantum Confinement from the Size Dependence of the Photoluminescence of Silicon Quantum Wires

DP Yu,ZG Bai,JJ Wang,YH Zou,W Qian,JS Fu,HZ Zhang,Y Ding,GC Xiong,LP You,J Xu,SQ Feng

DOI: https://doi.org/10.1103/physrevb.59.r2498

IF: 3.7

1999-01-01

Physical Review B

Abstract:The recent success of bulk synthesis of pure nanoscale silicon quantum wires (SiQW's) enables us to evaluate their photoluminescence (PL) characteristics under ultraviolet photoexcitation. Intensive multiple light emissions ranging from dark red to blue regions were revealed for as-grown and partially oxidized SiQW samples. The red light emission was ascribed to a quantum confinement effect originating from the crystalline core of the SiQW's that is closely mediated by the interface. However, the PL emission from green to blue is found to be definitely unrelated to quantum confinement; instead they are attributed to the radiative recombination from defect centers in the overcoating layer of the amorphous silicon oxide outside the SiQW's.
Ultrafast Blue Light Emission from SiC Nanowires

Fuli Zhao,Hongxin Chen,S. Z. Deng,Ning Xu,Tianqing Jia,Zhizhan Xu

IF: 2.56

2007-01-01

Chinese Optics Letters

Abstract:Cubic silicon carbide (SiC) nanowires are synthesized in a catalyst-assisted process. The nanowires with diameter of ~40 nm exhibit strong blue light emission at room temperature under ultraviolet (UV) femtosecond laser excitation. The photon energy of peak emission is higher than the energy bandgap of cubic SiC which shows involvement of quantum confinement effect. The ultrafast fluorescence is deconvoluted by Monte-Carlo method. The results show two ultrafast decay processes whose lifetimes are about 26 and 567 ps respectively. The mechanisms of such ultrafast processes are discussed.
Quantum Confinement Effect In Silicon Carbide Nanostructures: A First Principles Study

Shengjie Wang,Chunlai Zhang,Zhiguo Wang,Xiaotao Zu

2010-01-01

Abstract:Based on the density functional theory (DFT) within local-density approximations (LDA) approach, we calculate the electronic properties of SiC nanowires and nanodots. The saturated nanowires exhibit semiconducting characteristics with a direct band gap and the band gaps decrease with increasing the diameters of the nanostructures due to quantum confinement. The difference of between the band gap of nanowires and that of bulk SiC evolves as Delta E(g)(wire) = 0.51/d(1.245) as the diameter d decreases, while Delta E(g)(dot) = 2.18/d(0.85) for the case of nanodots.
Field Emission from Nonaligned SiC Nanowires

W. M. Zhou,Y. J. Wu,Eric Siu-Wai Kong,F. Zhu,Z. Y. Hou,Y. F. Zhang

DOI: https://doi.org/10.1016/j.apsusc.2006.03.088

IF: 6.7

2006-01-01

Applied Surface Science

Abstract:β-SiC nanowires with an average diameter of 8–20nm were synthesized using a simple thermal evaporation of SiO powders onto activated carbon fibers. Field emission was investigated based on the SiC nanowires deposited on a platinum film. A low turn-on field of 3.1–3.5Vμm−1 was measured at an anode-sample separation of 100–140μm. This type of SiC nanowires can be applied as field emitters in displays as well as vacuum electronic devices.
Quantum-mechanical Investigation of Field-Emission Mechanism of a Micrometer-Long Single-Walled Carbon Nanotube.

X Zheng,GH Chen,ZB Li,SZ Deng,NS Xu

DOI: https://doi.org/10.1103/physrevlett.92.106803

IF: 8.6

2004-01-01

Physical Review Letters

Abstract:A quantum-mechanical simulation is carried out to investigate the charge distribution and electrostatic potential along a 1 microm long (5,5) single-walled carbon nanotube under realistic field-emission experimental conditions. A single layer of carbon atoms is found sufficient to shield most of the electric field except at the tip where strong field penetration occurs. The penetration leads to a nonlinear decrease of potential barrier for emission, which is equally responsible for the low threshold voltage besides the well-known geometrical field enhancement factor.
Field Electron Emission of Nanorods of Semiconductors of Wide Energy Band Gaps

Zhibing Li,Weiliang Wang,Shaozhi Deng,Ningsheng Xu,Guiyang Huang

DOI: https://doi.org/10.1109/ivnc.2005.1619458

2005-01-01

Abstract:It is shown that significant field emission from nanorods of wide band gap semiconductors is possible. The nanorod is assumed to have a thin surface layer containing a large number of localized states originating from defects. Taking SiC as an example, the electrostatic potential, charge distribution, conduction current, tunnelling current, and field enhancement are calculated. It is found that the field-induced insulator to semimetal transition is responsible for the efficient field emission from the nanorods and that field enhancement is not constant with applied fields but varies with the field and has a maximum.
Photoluminescence property of inexpensive flexible SiC nanowires membrane by electrospinning and carbothermal reduction

Jian Wei,Xueting Li,Yuan Wang,Bing Chen,Mengjie Zhang,Congmin Qin

DOI: https://doi.org/10.1111/jace.17396

IF: 4.186

2020-08-11

Journal of the American Ceramic Society

Abstract:<p>Silicon carbide nanowire (SiC NW), as a typical wide band gap semiconductor was used as light‐emitting materials and devices in high‐temperature and harsh environments due to its excellent properties. In this paper, flexible ultra‐long SiC NWs membrane was successfully synthesized by electrospinning and subsequently high temperature sintering using phenolic resin and silica sol as precursors. Results of system characterization reveal that SiC NWs possess a smooth and uniform surface with diameter distribution mainly between 50‐300nm and a length of more than tens of microns, forming a network structure. The growth mechanism of synthesized nanowires was mainly carbothermal reduction in situ and was accompanied by vapor‐solid (V‐S) reaction. The present work provides a simple and cost‐effective way for controllable fabrication of SiC NWs membrane. The photoluminescence spectrum of SiC NWs membrane emerged a clear blue shift, indicating a potential application in optoelectronic devices and discussed the potential applications of SiC NWs membrane in other fields.</p>

materials science, ceramics
Andreev Reflection Enhanced Single Hole Tunneling in Ge/Si Core/shell Nanowire Quantum Dot

Xiao-Jie Hao,Guo-Ping Guo,Hai-Ou Li,Cheng Zhou,Gang Cao,Guang-Can Guo,Wayne Y. Fung,Zhongqing Ji,Wei Lu,Tao Tu

2010-01-01

Abstract:We experimentally study the electrical transport properties of Ge/Si core/shell nanowire device with two superconducting leads in the Coulomb blockade regime. Anomalous zero field magnetoconductance peaks are observed for the first time at the gate voltages where Coulomb blockade oscillation peaks present. Many evidences indicate this feature is due to Andreev reflection enhanced phase coherent single hole tunneling through the quantum dot, which can be suppressed by an external magnetic field without destroying the superconducting states in the electrodes.
Field Emission of Graphene and Carbon Nanotubes

Xiao Li,Kunlin Wang,Jinquan Wei,Dehai Wu,Hongwei Zhu

DOI: https://doi.org/10.1109/ivnc.2012.6316912

2012-01-01

Abstract:Field emission properties of various carbon nanostructures, including carbon nanotube (CNT) films, graphene, amorphous graphene and CNT/graphene composite films are investigated and compared. The crystallinity and surface morphology both play important role in field emission of nano-carbon materials.
Ultraviolet-visible light photoluminescence induced by stacking faults in 3C-SiC nanowires.

Hailing Yu,Qiang Wang,Lei Yang,Bing Dai,Jiaqi Zhu,Jeicai Han

DOI: https://doi.org/10.1088/1361-6528/ab084f

IF: 3.5

2019-01-01

Nanotechnology

Abstract:The relationship between stacking faults and optical properties in 3C-SiC nanowires is reported in this paper. 3C-SiC nanowires prepared at 900 degrees C have high density stacking faults. The stacking faults cause a change in the Si-C atom stacking sequence and form nanosegments of 4H-SiC and 6H-SiC in the 3C-SiC matrix. The mixture of polytypes leads to a shift in the peaks and the addition of peaks in both Raman spectra and photoluminescence (PL) spectra. The Raman peaks are centered at 785 cm(-1) and at 935 cm(-1) and correspond to the transverse optic mode and the longitudinal optic mode of 3C-SiC, respectively. The PL peaks are blueshifted and the emissions are in the ultraviolet-visible light band.

Quantum confinement effect and field emission characteristics of ultrathin 3C–SiC nanobelts

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Experimental Evidence for the Quantum Confinement Effect in 3C-Sic Nanocrystallites.

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

A Study on the Field Emission Characteristics of A Wide Band-Gap Thin Film

Large-scale synthesis, growth mechanism, and photoluminescence of 3C-SiC nanobelts

Quantum confinement effect in 6H-SiC quantum dots observed via plasmon–exciton coupling-induced defect-luminescence quenching

Luminescent Silicon Carbide Nanocrystallites in 3C-Sic∕polystyrene Films

Fabrication and field-emission performance of zirconium disulfide nanobelt arrays.

Ultraviolet Photoluminescence from 3C-Sic Nanorods

Quantum Confinement Effect on Li-Segregation in Si Nanowires

Direct Evidence of Quantum Confinement from the Size Dependence of the Photoluminescence of Silicon Quantum Wires

Ultrafast Blue Light Emission from SiC Nanowires

Quantum Confinement Effect In Silicon Carbide Nanostructures: A First Principles Study

Field Emission from Nonaligned SiC Nanowires

Quantum-mechanical Investigation of Field-Emission Mechanism of a Micrometer-Long Single-Walled Carbon Nanotube.

Field Electron Emission of Nanorods of Semiconductors of Wide Energy Band Gaps

Photoluminescence property of inexpensive flexible SiC nanowires membrane by electrospinning and carbothermal reduction

Andreev Reflection Enhanced Single Hole Tunneling in Ge/Si Core/shell Nanowire Quantum Dot

Field Emission of Graphene and Carbon Nanotubes

Ultraviolet-visible light photoluminescence induced by stacking faults in 3C-SiC nanowires.