Abstract:The group-Ⅲ nitrides and their related ternary alloys have been becoming the most attractive material for light emitting diodes (LEDs) and laser diodes (LDs) in the UV and blue spectral range. However, the origins of the yellow luminescence (YL), which is commonly observed in almost undoped and n-type GaN, remain unclear. The nature and the role of initial nitridation of sapphire surface and the generation of threading dislocation (TD) are ambiguous too. It is a possible way to resolve the above problems by studying the microstructures and optical properties combining the growth conditions. In this work, two kinds of GaN films were grown by MOCVD under different initial nitridation time (180 seconds for Sample A, and 90s for Sample B). The growth temperature is about 950℃. The cross-sectional transmission electron microscope (TEM) is performed near the GaN/sapphire interface. Corresponding the growth processes, there are three zones in the GaN layer: buffer layer, zone and sound zone. There are haystack-like domains in the faulted zone, in which there are high density of extended defects. The thickness of the faulted zone is about 0.4μm. Just above this region, the defects density is reduced sharply, and the quality of the layer is improved, which is identified by electron diffraction (ED) patterns. In comparison, Sample A shows about an order lower density of extended defects than Sample B, their columnar diameter is larger and its ED pattern is sharper, too. The buffer layer of Sample B is more smooth than Sample A. The appropriate rougher morphology of the buffer layer may cause that the structural disorder between the high-temperature (HT) grown island and the buffer layer is accommodated by Frank and Shockley partial dislocations. However, the TD is likely to propagate into the HT GaN from the smooth surface of the buffer layer grown after extensively nitridation of substrate. According to the position and width of X-ray diffraction peaks of (0002) and (0004), the size of crystalline grain, D and the residual strain could be calculated. The values of(D,e in)of Sample A and B are (175nm,0.167%) and (90nm,0.141%), respectively. Small size of crystalline grain may be advantageous to relieve the lattice and thermal mismatch stress, but it lead to higher density of extended defects. The width of GaN (0002) reflections of Sample A is 4min lower than that of Sample B. This result may be due to the lower screw TD. The higher density of screw TD may widen the GaN (0002) peak in X-ray rocking curve. In room temperature PL spectra, the ratio of band-edge emission intensity to YL one of Sample A is 3 orders larger than that of Sample B. Furthermore the YL in Sample B is stronger and has fine structure, while that in Sample A is nearly invisible in the PL spectrum. The GaN epilayer with high quality exhibits almost no YL emission. It is well known that the YL corresponds to the deformed crystal structure. We assigned that the screw TD and mixed TD are attributed to the YL referring to our XRD results.

Structural and Optical Investigation of Nonpolar A-Plane Gan Grown by Metal-Organic Chemical Vapour Deposition on R-Plane Sapphire by Neutron Irradiation

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Optical and Structural Investigation of A-Plane Gan Layers on R-Plane Sapphire with Nucleation Layer Optimization

Particular Electrical Quality of A-Plane Gan Films Grown on R-Plane Sapphire by Metal-Organic Chemical Vapor Deposition

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

Optical property studies of GaN films grown by MOCVD

Gan Films under Different Growth Mechanisms Studied by Synchrotron X-Ray Absorption Spectroscopy

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

Micro-Raman and Photoluminescence Studies of Neutron-Irradiated Gallium Nitride Epilayers

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar A-Plane Gan Grown on R-Sapphire Substrates

Microstructural and Optical Properties of GaN Films on Nitrided Sapphire Substrates

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

The Effects of Substrate Nitridation on the Growth of Nonpolar A-Plane GaN on R-Plane Sapphire by Metalorganic Chemical Vapor Deposition

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Growth of A-Plane GaN Films on R-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Nonpolar A-Plane Gan Films Grown On Gamma-Lialo2 (3 0 2) Substrates By Low-Pressure Mocvd

Investigation of Non-doped GaN Grown on Sapphire Substrate