Abstract:Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications. However, traditional RRAM, which accommodates two states depending on applied voltage, cannot meet the high density requirement in the era of big data. Many research groups have demonstrated that RRAM possesses the potential for multi-level cells, which would overcome demands related to mass storage. Among numerous semiconductor materials, gallium oxide (a fourth-generation semiconductor material) is applied in the fields of optoelectronics, high-power resistive switching devices, and so on, due to its excellent transparent material properties and wide bandgap. In this study, we successfully demonstrate that Al/graphene oxide (GO)/Ga2O3/ITO RRAM has the potential to achieve two-bit storage. Compared to its single-layer counterpart, the bilayer structure has excellent electrical properties and stable reliability. The endurance characteristics could be enhanced above 100 switching cycles with an ON/OFF ratio of over 103. Moreover, the filament models are also described in this thesis to clarify the transport mechanisms.

Recoverable Electrical Transition in A Single Graphene Sheet for Application in Nonvolatile Memories

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Retention Behavior of Graphene Oxide Resistive Switching Memory on Flexible Substrate

Conjugated-Polymer-Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect

Multilevel Resistive Switching in Planar Graphene/Sio2 Nanogap Structures

Push–Pull Archetype of Reduced Graphene Oxide Functionalized with Polyfluorene for Nonvolatile Rewritable Memory

Oxide Resistive Memory with Functionalized Graphene As Built-In Selector Element

Graphene Oxide Nanosheets Based Organic Field Effect Transistor for Nonvolatile Memory Applications

Graphene-based atomic-scale switches.

Gate-controlled Non-Volatile Graphene-Ferroelectric Memory

Bistable Electrical Switching And Electronic Memory Effect In A Solution-Processable Graphene Oxide-Donor Polymer Complex

Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

Tetrahedral Amorphous Carbon Resistive Memories with Graphene-Based Electrodes

Graphene-based nonvolatile terahertz switch with asymmetric electrodes

Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices

The Mechanism of the Asymmetric Set and Reset Speed of Graphene Oxide Based Flexible Resistive Switching Memories

Graphene Oxide and Tio2 Nano-Particle Composite Based Nonvolatile Memory

Nonvolatile Rewritable Memory Effects in Graphene Oxide Functionalized by Conjugated Polymer Containing Fluorene and Carbazole Units

Transformation of Threshold Volatile Switching to Quantum Point Contact Originated Nonvolatile Switching in Graphene Interface Controlled Memory Devices

Electrical Characteristics and Carrier Transport Mechanisms of Write-Once-read-many-times Memory Elements Based on Graphene Oxide Diodes

Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing